MBM29LV160B-90PFTN Fujitsu, MBM29LV160B-90PFTN Datasheet

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MBM29LV160B-90PFTN

Manufacturer Part Number
MBM29LV160B-90PFTN
Description
MBM29LV160B-90PFTN16M (2M x 8/1M x 16) BIT
Manufacturer
Fujitsu
Datasheet

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FUJITSU SEMICONDUCTOR
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FLASH MEMORY
CMOS
16M (2M
MBM29LV160T
Embedded Erase
FEATURES
• Single 3.0 V read, program and erase
• Compatible with JEDEC-standard commands
• Compatible with JEDEC-standard world-wide pinouts
• Minimum 100,000 program/erase cycles
• High performance
• Sector erase architecture
• Boot Code Sector Architecture
• Embedded Erase
• Embedded program
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
• Automatic sleep mode
• Low V
DATA SHEET
Minimizes system level power requirements
Uses same software commands as E
48-pin TSOP (I) (Package suffix: PFTN-Normal Bend Type, PFTR-Reversed Bend Type)
46-pin SON (Package suffix: PN)
48-pin CSOP (Package suffix: PCV)
48-ball FBGA (Package suffix: PBT)
80 ns maximum access time
One 8K word, two 4K words, one 16K word, and thirty-one 32K words sectors in word mode
One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K bytes sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase
T = Top sector
B = Bottom sector
Automatically pre-programs and erases the chip or any sector
Automatically programs and verifies data at specified address
Hardware method for detection of program or erase cycle completion
When addresses remain stable, automatically switches themselves to low power mode
CC
TM
write inhibit
and Embedded Program
TM
Algorithms
TM
Algorithms
2.5 V
TM
-80/-90/-12
are trademarks of Advanced Micro Devices, Inc.
8/1M
2
PROMs
/MBM29LV160B
16) BIT
DS05-20846-4E
-80/-90/-12
(Continued)

Related parts for MBM29LV160B-90PFTN

MBM29LV160B-90PFTN Summary of contents

Page 1

... Hardware method for detection of program or erase cycle completion • Automatic sleep mode When addresses remain stable, automatically switches themselves to low power mode • Low V write inhibit 2 Embedded Erase TM and Embedded Program 8/1M 16) BIT /MBM29LV160B -80/-90/-12 2 PROMs TM are trademarks of Advanced Micro Devices, Inc. DS05-20846-4E -80/-90/-12 (Continued) ...

Page 2

... Temporary sector unprotection Temporary sector unprotection via the RESET pin • In accordance with CFI (Common Flash Memory Interface) PACKAGE 48-pin plastic TSOP (I) Marking Side (FPT-48P-M19) 48-pin plastic CSOP (LCC-48P-M03) 2 /MBM29LV160B Marking Side (FPT-48P-M20) 48-pin plastic FBGA (BGA-48P-M03) (BGA-48P-M13) -80/-90/-12 46-pin plastic SON (LCC-46P-M02) ...

Page 3

... Fujitsu’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability, and cost effectiveness. The MBM29LV160T/B memory electrically erases all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM programming mechanism of hot electron injection. /MBM29LV160B -80/-90/-12 -80/-90/-12 supply. ...

Page 4

... Kbytes or 32 Kwords SA31 32 Kbytes or 16 Kwords SA32 8 Kbytes or 4 Kwords SA33 8 Kbytes or 4 Kwords SA34 16 Kbytes or 8 Kwords MBM29LV160T Top Boot Sector Architecture 4 /MBM29LV160B -80/-90/- Address Range ( 16) Address Range 00000H to 0FFFFH 10000H to 1FFFFH 20000H to 2FFFFH 30000H to 3FFFFH 40000H to 4FFFFH 50000H to 5FFFFH 60000H to 6FFFFH ...

Page 5

... SA30 64 Kbytes or 32 Kwords SA31 64 Kbytes or 32 Kwords SA32 64 Kbytes or 32 Kwords SA33 64 Kbytes or 32 Kwords SA34 64 Kbytes or 32 Kwords MBM29LV160B Bottom Boot Sector Architecture /MBM29LV160B -80/-90/- Address Range 00000H to 03FFFH 04000H to 05FFFH 06000H to 07FFFH 08000H to 0FFFFH 10000H to 1FFFFH 20000H to 2FFFFH 30000H to 3FFFFH ...

Page 6

... Buffer State Control BYTE RESET Command Register CE OE Low V Detector /MBM29LV160B MBM29LV160T/160B +0.3 V -80 –0.3 V +0.6 V — –0 RY/BY Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable STB Timer for Address Program/Erase Latch -80/-90/-12 — ...

Page 7

... RESET BYTE /MBM29LV160B -80/-90/-12 TSOP( (Marking Side) BYTE Standard Pinout ...

Page 8

... /MBM29LV160B (TOP VIEW ...

Page 9

... MBM29LV160T LOGIC SYMBOL RY/BY RESET BYTE /MBM29LV160B -80/-90/-12 Table 1 MBM29LV160T/B Pin Configuration Pin Address Inputs Data Inputs/Outputs Chip Enable Output Enable OE Write Enable WE Ready/Busy Output RY/BY Hardware Reset Pin/ ...

Page 10

... Notes: 1. Manufacturer and device codes may also be accessed via a command register write sequence. See Table 7. 2. Refer to the section on Sector Protection can 3.3 V ±10 also used for the extended sector protection. 10 /MBM29LV160B MBM29LV160T/B User Bus Operation (BYTE = ...

Page 11

... Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29LV160 T -80 DEVICE NUMBER/DESCRIPTION MBM29LV160 16 Mega-bit (2M 3.0 V-only Read, Write, and Erase /MBM29LV160B -80/-90/-12 PFTN PACKAGE TYPE PFTN = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout PFTR = 48-Pin Thin Small Outline Package (TSOP) Reverse Pinout ...

Page 12

... To activate this mode, the programming equipment must force V identifier bytes may then be sequenced from the devices outputs by toggling address A addresses are DON’T CARES except A 12 /MBM29LV160B - t time.) See Figure 5.1 for timing specifications. ACC OE of wake up time before outputs are valid for read access. ...

Page 13

... Manufacture’s Code 04H C4H A (B) -1 MBM29LV160T 0 (W) 22C4H Device Code 49H A (B) -1 MBM29LV160B 0 2249H (W) Sector Protection 01H (B): Byte mode (W): Word mode /MBM29LV160B -80/-90/- and DQ are equal to ‘0’ must ...

Page 14

... SA28 SA29 SA30 SA31 SA32 SA33 SA34 /MBM29LV160B Sector Address Tables (MBM29LV160T Address Range 00000H to 0FFFFH 10000H to 1FFFFH 20000H to 2FFFFH ...

Page 15

... SA30 SA31 SA32 SA33 SA34 /MBM29LV160B -80/-90/-12 Sector Address Tables (MBM29LV160B Address Range 00000H to 03FFFH 04000H to 05FFFH 06000H to 07FFFH 08000H to 0FFFFH ...

Page 16

... V). During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once the taken away from the RESET pin, all the previously protected sectors will be protected again. (See Figures 18 and 25.) 16 /MBM29LV160B and Addresses are latched on the falling edge ...

Page 17

... PD =Data to be programmed at location PA. Data is latched on the rising edge of WE. 5. The system should generate the following address patterns: Word Mode: 555H or 2AAH to addresses A Byte Mode: AAAH or 555H to addresses A 6. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode. /MBM29LV160B -80/-90/-12 Second Fourth Bus Third Bus ...

Page 18

... PROM programmers typically access the signature codes by raising A voltage onto the address lines is not generally desired system design practice. 18 /MBM29LV160B MBM29LV160T/B Extended Command Definitions First Bus Second Bus ...

Page 19

... Following the last command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A read cycle from address XX01H for 16 (XX02H for 8) retrieves the device code (MBM29LV160T = C4H and MBM29LV160B = 49H for 8 mode; MBM29LV160T = 22C4H and MBM29LV160B = 2249H for 16 mode). (See Tables 4.1 and 4.2.) All manufactures and device codes will exhibit odd parity with DQ The sector state (protection or unprotection) will be indicated by address XX02H for 16 (XX04H for 8) ...

Page 20

... Program. This Program mode is known as the erase-suspend-program mode. Again, programming in this mode is the same as programming in the regular Program mode except that the data must 20 /MBM29LV160B , Sector Erase Timer.) Any command other than Sector Erase 3 is “1” (See Write Operation Status section) ...

Page 21

... If the output data is logical “0”, please 0 repeat to write extended sector protect command (60H) again. To terminate the operation necessary to set RESET pin /MBM29LV160B -80/-90/-12 to toggle. The end of the erase- 2 must be read from the Program address 7 ...

Page 22

... DQ will be read on successive read attempts. 7 The Data Polling feature is only active during the Embedded Programming Algorithm, Embedded Erase Algorithm or sector erase time-out. See Figure 9 for the Data Polling timing specifications and diagrams. 22 /MBM29LV160B Table 9 Hardware Sequence Flags Toggle ...

Page 23

... second status check, the command may not have been accepted. See Table 9: Hardware Sequence Flags. /MBM29LV160B -80/-90/-12 to toggle. In addition, an Erase Suspend/Resume command will 6 never stops toggling. Once the device has exceeded timing limits, the DQ ...

Page 24

... RESET pulse. See Figure 11 and 12 for a detailed timing diagram. The RY/BY pin is pulled high in standby mode. Since this is an open-drain output, RY/BY pins can be tied together in parallel with a pull-up resistor /MBM29LV160B , can be used to determine whether the device is in the Embedded Erase 6 to toggle during the Embedded Erase Algorithm. If the 2 ...

Page 25

... The metal portion of marking side is connected with internal chip electrically. Please pay attention not to occur electrical connection during operation. In worst case, it may be caused permanent damage to device or system by excessive current. /MBM29LV160B -80/-90/-12 ) for at least 500 ns in order to properly reset the internal state machine. ...

Page 26

... Max. timeout for full chip N erase 2 times typical Device Size = 2 N byte Flash Device Interface description Max. number of byte in multi-byte write = 2 N Number of Erase Block Regions within device 26 /MBM29LV160B to A Description 10h 0051h Erase Block Region 1 Information 11h 0052h ...

Page 27

... No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. /MBM29LV160B -80/-90/-12 , OE, and RESET (Note 1) ............ –0 OE, and RESET pins are – ...

Page 28

... Figure +2.0 V Figure 2 +14.0 V +13 +0 Note : This waveform is applied for A Figure 3 28 /MBM29LV160B Maximum Negative Overshoot Waveform Maximum Positive Overshoot Waveform OE, and RESET. 9 Maximum Positive Overshoot Waveform 2 -80/-90/-12 ...

Page 29

... DC operating current and the frequency dependent component active while Embedded Erase or Embedded Program is in progress Automatic sleep mode enables the low power mode when address remain stable for 150 ns – not exceed /MBM29LV160B -80/-90/-12 Test Conditions Max ...

Page 30

... Note: Test Conditions: Output Load: 1 TTL gate and 30 pF (MBM29LV160T/B-80/-90) Input rise and fall times Input pulse levels: 0 3.0 V Timing measurement reference level Input: 1.5 V Output: 1.5 V Notes including jig capacitance (MBM29LV160T/B-80/-90 100 pF including jig capacitance (MBM29LV160T/B-12 /MBM29LV160B Description Test Setup — Max Max. IL — ...

Page 31

... Write Pulse Width (Note 2) WPP — Setup Time to WE Active (Note 2) OESP — Setup Time to WE Active (Note 2) CSP — t Recover Time From RY/BY RB /MBM29LV160B -80/-90/-12 Description Min. Min. Min. Min. Min. Min. Read Min. Toggle and Data Polling Min. Min. ...

Page 32

... BYTE Switching High to Output Active FHQV — t Rise Time to V VIDR — t RESET Pulse Width RP Notes: 1. This does not include the preprogramming time. 2. This timing is for Sector Protection operation. 32 /MBM29LV160B Description Min. Max. Max. Min. (Note 2) Min. ID Min. -80/-90/-12 MBM29LV160T/B Unit -80 -90 ...

Page 33

... MBM29LV160T SWITCHING WAVEFORMS • Key to Switching Waveforms WAVEFORM Addresses OEH WE HIGH-Z Outputs Figure 5.1 /MBM29LV160B -80/-90/-12 INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Change from from May Will Be Change Change from from “H” or “L”: ...

Page 34

... MBM29LV160T -80/-90/-12 Addresses RESET Outputs Figure 5.2 34 /MBM29LV160B t RC Addresses Stable t ACC t RH HIGH-Z AC Waveforms for Hardware Reset/Read Operations -80/-90/- Output Valid ...

Page 35

... OUT 5. Figure indicates last two bus cycles out of four bus cycle sequence. 6. These waveforms are for the 16 mode. (The addresses differ from 8 mode.) Figure 6 AC Waveforms for Alternate WE Controlled Program Operations /MBM29LV160B Data Polling ...

Page 36

... OUT 5. Figure indicates last two bus cycles out of four bus cycle sequence. 6. These waveforms are for the 16 mode. (The addresses differ from 8 mode.) Figure 7 AC Waveforms for Alternate CE Controlled Program Operations 36 /MBM29LV160B 3rd Bus Cycle Data Polling 555H ...

Page 37

... VCS the sector address for Sector Erase. Addresses = 555H (Word), AAAAH (Byte) for Chip Erase. 2. These waveforms are for the 16 mode. (The addresses differ from 8 mode.) Figure 8 AC Waveforms for Chip/Sector Erase Operations /MBM29LV160B -80/-90/-12 2AAH 555H 555H ...

Page 38

... AC Waveforms for Data Polling during Embedded Algorithm Operations OES OE DQ Data Stops toggling. (The device has completed the Embedded operation.) 6 Figure 10 AC Waveforms for Taggle Bit I during Embedded Algorithm Operations 38 /MBM29LV160B OEH WHWH1 Output Flag 0 ...

Page 39

... MBM29LV160T -80/-90/- RY/BY Figure 11 RY/BY Timing Diagram during Program/Erase Operations WE RESET RY/BY Figure 12 RESET, RY/BY Timing Diagram /MBM29LV160B The rising edge of the last WE signal Entire programming or erase operations t BUSY READY -80/-90/-12 39 ...

Page 40

... OE BYTE ELFH Figure BYTE t ELFL A-1 Figure 14 40 /MBM29LV160B FHQV Timing Diagram for Word Mode Configuration FLQZ Timing Diagram for Byte Mode Configuration ...

Page 41

... MBM29LV160T -80/-90/- BYTE Figure 15 BYTE Timing Diagram for Write Operations /MBM29LV160B The falling edge of the last WE signal Input Valid t SET HOLD -80/-90/-12 41 ...

Page 42

... OE t VLHT WE CE Data t VCS V CC SAX = Sector Address for initial sector SAY = Sector Address for next sector Note byte mode Figure 16 42 /MBM29LV160B t WPP t VLHT t OESP t CSP AC Waveforms for Sector Protection Timing Diagram -80/-90/-12 SAY t VLHT 01H t OE ...

Page 43

... RESET t VIDR Add 60H Data SPAX : Sector Address to be protected SPAY : Next Sector Address to be protected TIME-OUT : Time-out Window = 150 s (min) Figure 17 Extended Sector Protection Timing Diagram /MBM29LV160B -80/-90/-12 SPAX SPAX TIME-OUT 60H 40H -80/-90/-12 SPAY 01H 60H ...

Page 44

... Erase Suspend Toggle DQ and with OE Note read from the erase-suspended sector /MBM29LV160B t Program or Erase Command Sequence VLHT Unprotection period Temporary Sector Unprotection Timing Diagram Enter Erase Suspend Program Erase Erase Suspend Read Suspend Read Program Figure ...

Page 45

... MBM29LV160T EMBEDDED PROGRAM TM ALGORITHM Increment Address * : The sequence is applied for 16 mode. The addresses differ from 8 mode. Figure 20 /MBM29LV160B -80/-90/-12 Start Write Program Command Sequence (See Below) Data Polling Device No Verify Byte ? Yes No Last Address ? Yes Programming Completed Program Command Sequence* (Address/Command): 555H/AAH ...

Page 46

... ALGORITHM Chip Erase Command Sequence* (Address/Command): 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H * : The sequence is applied for 16 mode. The addresses differ from 8 mode. 46 /MBM29LV160B Start Write Erase Command Sequece (See Below) Data Polling or Toggle Bit from Device No Data = FFH ? Yes Erasure Completed ...

Page 47

... MBM29LV160T -80/-90/- rechecked even “1” because Figure 22 /MBM29LV160B VA =Address for programming =Any of the sector addresses Start within the sector being erased during sector erase or multiple erases operation. Read Byte =Any of the sector addresses ( within the sector not being Addr ...

Page 48

... MBM29LV160T -80/-90/- rechecked even changing to “1” /MBM29LV160B Start Read ( Addr. = “H” or “L” Toggle 6 ? Yes Yes Read Byte ( Addr. = “H” or “L” Toggle Yes Fail Pass = “1” because DQ ...

Page 49

... MBM29LV160T -80/-90/-12 Increment PLSCNT No PLSCNT = 25? Yes Remove V from A ID Write Reset Command Device Failed * : byte mode Figure 24 /MBM29LV160B Start Setup Sector Addr 19 16 PLSCNT = RESET = ...

Page 50

... MBM29LV160T -80/-90/-12 Notes: 1. All protected sectors are unprotected. 2. All previously protected sectors are protected once again. Figure 25 50 /MBM29LV160B Start RESET = V ID (Note 1) Perform Erase or Program Operations RESET = V IH Temporary Sector Unprotection Completed (Note 2) Temporary Sector Unprotection Algorithm -80/-90/-12 ...

Page 51

... MBM29LV160T FAST MODE ALGORITHM Increment Address * : The sequence is applied for 16 mode The addresses differ from 8 mode. Figure 26 Embedded Programming Algorithm for Fast Mode /MBM29LV160B -80/-90/-12 Start 555H/AAH 2AAH/55H 555H/20H XXXXH/A0H Program Address/Program Data Data Polling Device No Verify Byte? Yes No Last Address ? Yes ...

Page 52

... Temporary Sector Unprotect Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed Figure 27 52 /MBM29LV160B Start RESET = V ID Wait Extended Sector Protect Entry? Yes To Setup Sector Protect Write XXXH/60H PLSCNT = 1 To Sector Protect Write 60H to Sector Address ...

Page 53

... Note: Test conditions T = 25° 1.0 MHz A FBGA PIN CAPACITANCE Parameter Parameter Description Symbol C Input Capacitance IN C Output Capacitance OUT C Control Pin Capacitance IN2 Note: Test conditions T = 25° 1.0 MHz A /MBM29LV160B -80/-90/-12 Limits Min. Typ. Max. — — 8 300 — 16 360 — 16.8 50 100,000 — ...

Page 54

... INDEX 24 20.00±0.20 (.787±.008) 18.40±0.20 * (.724±.008) 0.10(.004) 19.00±0.20 (.748±.008) 1996 FUJITSU LIMITED F48029S-2C /MBM29LV160B -80/-90/-12 *: Resin protruction. (Each side: 0.15(.006) Max) 48 Details of "A" part "A" 0.15(.006) 0.25(.010 12.00±0.20 (.472±.008) 11.50REF (.460) 0.50(.0197) TYP 0.15± ...

Page 55

... INDEX 24 19.00±0.20 (.748±.008) 0.10(.004) 18.40±0.20 * (.724±.008) 20.00±0.20 (.787±.008) 1996 FUJITSU LIMITED F48030S-2C-2 C /MBM29LV160B -80/-90/-12 *: Resin protrusion. (Each side: 0.15(.006) Max) 48 Details of "A" part "A" 0.15(.006) 25 0.50±0.10 (.020±.004) 0.15±0.10 (.006±.002) 0.50(.0197) TYP 11 ...

Page 56

... INDEX 1997 FUJITSU LIMITED C46002S-4C /MBM29LV160B Note 1) Resin residue for * marked dimensions is 0.15 max on a single side. Note 2) Die pad geometry may change with the models. 0.75(.030)MAX (TOTAL HEIGHT 0.05(.002) M Details of "B" part " ...

Page 57

... MBM29LV160T (Continued) 48-pin plastic CSOP (LCC-48P-M03) 48 INDEX LEAD No. 1 10.00±0.10(.394±.004) 0.40(.016) 0.08(.003) TYP 9.20(.362)REF 1998 FUJITSU LIMITED C48056S-1C-1 C /MBM29LV160B -80/-90/-12 "A" 25 10.00±0.20 (.394±.008) 9.50±0.10 (.374±.004) +0.05 0.05 –0 +.002 .002 –.0 (Stand off) 24 0.95±0.05(.037±.002) (Mounting height) Details of " ...

Page 58

... FBGA (BGA-48P-M03) 9.00±0.20(.354±.008) INDEX 0.10(.004) 1997 FUJITSU LIMITED B48003S-1C /MBM29LV160B Note: The actual shape of corners may differ from the dimension. 1.20(.047)MAX (Mounting height) 0.35±0.10(.014±.004) (Stand off) 0.80(.031) NOM 8.00±0.20 4.00(.157) (.315±.008) ...

Page 59

... MBM29LV160T (Continued) 48-pin plastic FBGA (BGA-48P-M13) 9.00±0.20(.354±.008) INDEX C0.25(.010) 0.10(.004) 1998 FUJITSU LIMITED B480013S-1C-1 C /MBM29LV160B -80/-90/-12 Note: The actual shape of corners may differ from the dimension. +0.15 +.006 1.05 .041 –0.10 –.004 (Mounting height) 0.38±0.10(.015±.004) (Stand off) 8.00± ...

Page 60

... Tel: (65) 281-0770 Fax: (65) 281-0220 http://www.fmap.com.sg/ F9904 FUJITSU LIMITED Printed in Japan 60 /MBM29LV160B -80/-90/-12 All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document are presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use ...

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