IXFN55N50 IXYS Corporation, IXFN55N50 Datasheet
IXFN55N50
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IXFN55N50 Summary of contents
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HiPerFET TM Power MOSFET Single Die MOSFET Preliminary data sheet Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C DGR J V Continuous GS V Transient GSM ...
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... Characteristic Values Min. Typ. Max. 55 55N50 50 50N50 220 55N50 200 50N50 Note 1 1.5 250 = 100 V 1 4,835,592 4,881,106 4,850,072 4,931,844 IXFK50N50 IXFK55N50 IXFN50N50 IXFN55N50 TO-264 AA Outline Dim. Millimeter Inches n s Min. Max. Min. A 4.82 5.13 .190 A1 2.54 2.89 .100 nC A2 2.00 2 ...
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... 100 100 120 120 100 IXF_55N50 75 75 100 125 150 100 125 150 IXFK50N50 IXFK55N50 IXFN50N50 IXFN55N50 Figure 2. Output Characteristics at 125 100 V = 10V T = 125 Volts DS Figure 4 ...
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... IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 10000 1000 100 250 300 350 0.8 1 Pulse Width - Seconds 4,835,592 4,881,106 4,850,072 4,931,844 IXFK50N50 IXFK55N50 IXFN50N50 IXFN55N50 Figure 8. Capacitance Curves Ciss f = 1MHz Coss Crss Volts 5,017,508 5,049,961 5,187,117 5,486,715 ...