STPS80H100C STMicroelectronics, STPS80H100C Datasheet
STPS80H100C
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STPS80H100C Summary of contents
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... Rth July 2003 - Ed 100 V 175 °C 0.70 V Parameter Tc = 155° sinusoidal µs square F = 1kHz tp = 1µ 25°C STPS80H100CY PRELIMINARY DATASHEET Max247 Value 100 50 Per diode 40 Per device 80 400 ...
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... STPS80H100CY THERMAL RESISTANCES Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * ms, < 380 µs, < evaluate the maximum conduction losses use the following equation : ...
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... VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Fig. 6: Relative variation of thermal impedance junction to case versus pulse (per diode). Zth(j-c)/Rth(j-c) 1.0 0.8 Tc=50°C = 0.5 Tc=75°C 0.6 0.4 = 0.2 = 0.1 Tc=110°C 0.2 0.0 1E-1 1E+0 1E-3 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 5.0 1.0 0 100 1 1.4 1.6 1.8 2.0 STPS80H100CY Single pulse tp(s) 1E-2 1E-1 VR( =tp/T 1E+0 F=1MHz Tj=25°C 50 100 3/4 ...
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... Ordering type Marking STPS80H100CY STPS80H100CY EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...