MBM29LV200BC-70PFTN Fujitsu, MBM29LV200BC-70PFTN Datasheet

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MBM29LV200BC-70PFTN

Manufacturer Part Number
MBM29LV200BC-70PFTN
Description
Manufacturer
Fujitsu
Datasheet

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FUJITSU SEMICONDUCTOR
FLASH MEMORY
CMOS
2M (256K
MBM29LV200TC
Embedded Erase
FEATURES
• Single 3.0 V read, program, and erase
• Compatible with JEDEC-standard commands
• Compatible with JEDEC-standard world-wide pinouts
• Minimum 100,000 program/erase cycles
• High performance
• Sector erase architecture
• Boot Code Sector Architecture
• Embedded Erase
• Embedded Program
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
• Automatic sleep mode
• Low V
• Erase Suspend/Resume
DATA SHEET
Minimizes system level power requirements
Uses same software commands as E
48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
44-pin SOP (Package suffix: PF)
70 ns maximum access time
One 8K word, two 4K words, one 16K word, and three 32K words sectors in word mode
One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase
T = Top sector
B = Bottom sector
Automatically pre-programs and erases the chip or any sector
Automatically writes and verifies data at specified address
Hardware method for detection of program or erase cycle completion
When addresses remain stable, automatically switch themselves to low power mode
Suspends the erase operation to allow a read in another sector within the same device
CC
TM
write inhibit
and Embedded Program
TM
Algorithms
TM
Algorithms
2.5 V
TM
-70/-90/-12
are trademarks of Advanced Micro Devices, Inc.
2
PROMs
8/128K
/MBM29LV200BC
16) BIT
-70/-90/-12
DS05-20865-3E
(Continued)

Related parts for MBM29LV200BC-70PFTN

MBM29LV200BC-70PFTN Summary of contents

Page 1

... When addresses remain stable, automatically switch themselves to low power mode • Low V write inhibit 2 • Erase Suspend/Resume Suspends the erase operation to allow a read in another sector within the same device Embedded Erase TM and Embedded Program 8/128K /MBM29LV200BC -70/-90/-12 2 PROMs TM are trademarks of Advanced Micro Devices, Inc. DS05-20865-3E 16) BIT -70/-90/-12 (Continued) ...

Page 2

... Hardware method disables any combination of sectors from program or erase operations • Sector Protection set function by Extended sector Protect command • Temporary sector unprotection Temporary sector unprotection via the RESET pin PACKAGE 48-pin plastic TSOP(I) Marking Side (FPT-48P-M19) 2 /MBM29LV200BC -70/-90/-12 48-pin plasticTSOP(I) Marking Side (FPT-48P-M20) -70/-90/-12 44-pin plastic SOP Marking Side (FPT-44P-M16) ...

Page 3

... Fujitsu’s Flash technology combines years of EPROM and E of quality, reliability, and cost effectiveness. The MBM29LV200TC/BC memories electrically erase the entire chip or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM programming mechanism of hot electron injection. /MBM29LV200BC -70/-90/- ...

Page 4

... MBM29LV200BC Sector Architecture -70/-90/- 16) 3FFFFH 1FFFFH 64K byte 2FFFFH 17FFFH 64K byte 1FFFFH 0FFFFH 64K byte 0FFFFH 07FFFH 32K byte 07FFFH 03FFFH ...

Page 5

... State BYTE Control RESET Command Register CE OE Low V Detector /MBM29LV200BC -70/-90/-12 MBM29LV200TC/MBM29LV200BC +0.3 V -70 –0.3 V +0.6 V — –0 RY/BY Erase Voltage Generator Program Voltage Chip Enable Generator Output Enable Logic Y-Decoder STB Timer for Address Program/Erase ...

Page 6

... /MBM29LV200BC -70/-90/-12 TSOP(I) (Marking Side) MBM29LV200TC/MBM29LV200BC Standard Pinout FPT-48P-M19 (Marking Side) MBM29LV200TC/MBM29LV200BC Reverse Pinout FPT-48P-M20 -70/-90/- BYTE ...

Page 7

... MBM29LV200TC/200BC User Bus Operations (BYTE = V Operation Auto-Select Manufacturer Code (1) Auto-Select Device Code (1) Read (3) Standby Output Disable Write (Program/Erase) Enable Sector Protection (2), (4) Verify Sector Protection (2), (4) Temporary Sector Unprotection Reset (Hardware)/Standby /MBM29LV200BC -70/-90/-12 Table 1 MBM29LV200TC/200BC Pin Configuration Pin Address Inputs - ...

Page 8

... Notes: 1. Manufacturer and device codes may also be accessed via a command register write sequence. See Table 7. 2. Refer to the section on Sector Protection can 3.3 V ± 10 also used for the extended sector protection. 8 /MBM29LV200BC -70/-90/- ...

Page 9

... Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29LV200 T C -70 DEVICE NUMBER/DESCRIPTION MBM29LV200 2Mega-bit (256K 3.0 V-only Read, Program, and Erase /MBM29LV200BC -70/-90/-12 PFTN PACKAGE TYPE PFTN = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout PFTR = 48-Pin Thin Small Outline Package (TSOP) Reverse Pinout SPEED OPTION ...

Page 10

... To activate this mode, the programming equipment must force V identifier bytes may then be sequenced from the devices outputs by toggling address A addresses are DON’T CARES except A 10 /MBM29LV200BC -70/-90/-12 -t time.) When reading out a data without changing addresses after ACC OE ), output from the devices are disabled ...

Page 11

... IL code (MBM29LV200TC = 3BH and MBM29LV200BC = BFH for 8 mode; MBM29LV200TC = 223BH and MBM29LV200BC = 22BFH for 16 mode). These two bytes/words are given in the tables 4.1 and 4.2. All identifiers for manufactures and device will exhibit odd parity with DQ device codes when executing the autoselect, A Table 4 ...

Page 12

... The Sector Unprotection mode is activated by setting the RESET pin to high voltage (12 V). During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once the taken away from the RESET pin, all the previously protected sectors will be protected again. See Figures 17 and 25. 12 /MBM29LV200BC -70/-90/-12 , while ...

Page 13

... RY/BY output signal should be ignored during the RESET pulse. See Figure 12 for the timing diagram. Refer to Temporary Sector Unprotection for additional functionality. If hardware reset occurs during Embedded Erase Algorithm, there is a possibility that the erasing sector(s) cannot be used. /MBM29LV200BC -70/-90/-12 ) for at least 500 ns in order to properly reset the internal state machine. IL -70/-90/-12 ...

Page 14

... 10000H to 1FFFFH 20000H to 2FFFFH 30000H to 37FFFH 38000H to 39FFFH 3A000H to 3BFFFH 3C000H to 3FFFFH Sector Address Tables (MBM29LV200BC Address Range ( 00000H to 03FFFH 04000H to 05FFFH 06000H to 07FFFH 08000H to 0FFFFH X ...

Page 15

... PD = Data to be programmed at location PA. Data is latched on the falling edge of WE. 5. The system should generate the following address patterns: Word Mode: 555H or 2AAH to addresses A Byte Mode: AAAH or 555H to addresses A 6. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode. /MBM29LV200BC -70/-90/-12 Fourth Bus Second Bus Third Bus ...

Page 16

... Standard microprocessor read cycles will retrieve array data. This default value ensures that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Read Characteristics and Waveforms for the specific timing parameters. 16 /MBM29LV200BC -70/-90/-12 MBM29LV200TC/BC Extended Command Definitions First Bus ...

Page 17

... Following the command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A read cycle from address XX01H for 16(XX02H for 8) returns the device code (MBM29LV200TC = 3BH and MBM29LV200BC = BFH for 8 mode; MBM29LV200TC = 223BH and MBM29LV200BC = 22BFH for 16 mode). (See Tables 4.1 and 4.2.) All manufacturer and device codes will exhibit odd parity with DQ bit ...

Page 18

... Multiple Sector Erase Time; [Sector Erase Time + Sector Program Time (Preprogramming)] Number of Sector Erase Figure 21 illustrates the Embedded Erase 18 /MBM29LV200BC -70/-90/-12 All sectors + Chip Program Time (Preprogramming) TM Algorithm using typical command strings and bus operations. , Sector Erase Timer.) Any command other than Sector 3 is “ ...

Page 19

... To resume the operation of Sector Erase, the Resume command (30H) should be written. Any further writes of the Resume command at this point will be ignored. Another Erase Suspend command can be written after the chip has resumed erasing. /MBM29LV200BC -70/-90/-12 will stop toggling. The user must use the address of ...

Page 20

... Following the command write, a logical “1” at device output DQ protected sector in the read operation. If the output data is logical “0”, please repeat to write extended sector protect command (60H) again. To terminate the operation necessary to set RESET pin /MBM29LV200BC -70/-90/-12 active current is required even RESET pin and write a commnad sequence ...

Page 21

... Reading the byte address being programmed while in the erase-suspend program mode will indicate logic “1” at the DQ bit. However, successive reads from the erase-suspended sector will cause DQ 2 toggle and DQ are reserve pins for future use Fujitsu internal use only. 4 /MBM29LV200BC -70/-90/-12 Table 9 Hardware Sequence Flags -70/-90/- ...

Page 22

... Either toggling will cause the DQ cause the DQ to toggle. 6 See Figure 10 for the Toggle Bit I timing specifications and diagrams. 22 /MBM29LV200BC -70/-90/-12 . Upon completion of the Embedded Program 7 ) may change asynchronously while the output ...

Page 23

... Furthermore, DQ can also be used to determine which sector is being erased. When the device is in the erase 2 mode, DQ toggles if this bit is read from an erasing sector. 2 /MBM29LV200BC -70/-90/-12 never stops toggling. Once the devices have exceeded timing limits, the toggle during the Embedded Erase Algorithm. If the ...

Page 24

... Read mode. Also, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific multi-bus cycle command sequences. The devices also incorporate several features to prevent inadvertent write cycles resulting form V and power-down transitions or system noise. 24 /MBM29LV200BC -70/-90/- ...

Page 25

... logical one. Power-Up Write Inhibit Power-up of the devices with The internal state machine is automatically reset to the read mode on power-up. /MBM29LV200BC -70/-90/-12 power-up and power-down, a write cycle is locked out for the command register is disabled and all internal program/erase circuits LKO is above 2 ...

Page 26

... No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. 26 /MBM29LV200BC -70/-90/-12 , OE, RESET (Note 1) ................... –0 and RESET pins are –0.5 V. During voltage transitions, A9 – ...

Page 27

... V –2.0 V Figure +2.0 V Figure 2 Maximum Positive Overshoot Waveform 1 +14.0 V +13 +0 This waveform is applied for A Figure 3 Maximum Positive Overshoot Waveform 2 /MBM29LV200BC -70/-90/- Maximum Negative Overshoot Waveform OE, and RESET. 9 -70/-90/-12 27 ...

Page 28

... MHz active while Embedded Algorithm (program or erase progress Automatic sleep mode enables the low power mode when address remain stable for 150 ns – not exceed /MBM29LV200BC -70/-90/-12 Test Conditions ...

Page 29

... TTL gate and 100 pF (MBM29LV200TC/BC-90/-12) Input rise and fall times Input pulse levels: 0 3.0 V Timing measurement reference level Input: 1.5 V Output:1.5 V Notes including jig capacitance (MBM29LV200TC/BC-70 100 pF including jig capacitance (MBM29LV200TC/BC-90/-12) L /MBM29LV200BC -70/-90/-12 Test Setup — Min Max Max. ...

Page 30

... CE Setup Time to WE Active (Note 2) CSP — t Recover Time From RY/BY RB — t RESET Pulse Width RP — t RESET Hold Time Before Read RH 30 /MBM29LV200BC -70/-90/-12 Description Min. Min. Min. Min. Min. Min. Read Min. Toggle and Data Polling Min. Min. Min. Min. Min. ...

Page 31

... BYTE Switching High to Output Active FHQV — t Program/Erase Valid to RY/BY Delay BUSY — t Delay Time from Embedded Output Enable EOE Notes: 1. This does not include the preprogramming time. 2. This timing is for Sector Protection operation. /MBM29LV200BC -70/-90/-12 Description Max. Min. Max. Max. -70/-90/-12 MBM29LV200TC/BC Unit -70 -90 ...

Page 32

... MBM29LV200TC SWITCHING WAVEFORMS • Key to Switching Waveforms Addresses Outputs Figure 5.1 32 /MBM29LV200BC -70/-90/-12 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from from May Will Be Change Changing from from “H” or “L” Changing Any Change ...

Page 33

... MBM29LV200TC Addresses t RH RESET High-Z Outputs Figure 5.2 AC Waveforms for Hardware Reset/Read Operations /MBM29LV200BC -70/-90/- Addresses Stable t ACC Output Valid -70/-90/- ...

Page 34

... OUT 5. Figure indicates last two bus cycles out of four bus cycle sequence. 6. These waveforms are for the 16 mode. (The addresses differ from 8 mode.) Figure 6 AC Waveforms for Alternate WE Controlled Program Operations 34 /MBM29LV200BC -70/-90/-12 Data Polling ...

Page 35

... OUT 5. Figure indicates last two bus cycles out of four bus cycle sequence. 6. These waveforms are for the 16 mode. (The addresses differ from 8 mode.) Figure 7 AC Waveforms for Alternate CE Controlled Program Operations /MBM29LV200BC -70/-90/-12 Data Polling ...

Page 36

... GHWL WE Data t VCS V CC Notes the sector address for Sector Erase. Addresses = 555H (Word), AAAH (Byte) for Chip Erase. 2. These waveforms are for the 16 mode. (The addresses differ from 8 mode.) Figure 8 36 /MBM29LV200BC -70/-90/-12 555H 2AAH 555H 555H ...

Page 37

... AC Waveforms for Data Polling during Embedded Algorithm Operations CE t OEH WE t OES Toggle Data stops toggling (The device has completed the Embedded operation). 6 Figure 10 AC Waveforms for Toggle Bit I during Embedded Algorithm Operations /MBM29LV200BC -70/-90/- Valid Data t WHWH1 ...

Page 38

... MBM29LV200TC CE WE RY/BY Figure 11 RY/BY Timing Diagram during Program/Erase Operations WE RESET RY/BY 38 /MBM29LV200BC -70/-90/-12 The rising edge of the last WE signal READY Figure 12 RESET/RY/BY Timing Diagram -70/-90/-12 Entire programming or erase operations t BUSY t RB ...

Page 39

... Figure 13 Timing Diagram for Word Mode Configuration CE BYTE t ELFL Figure 14 Timing Diagram for Byte Mode Configuration BYTE Figure 15 /MBM29LV200BC -70/-90/-12 Data Output Data Output ( ( FHQV Data Output Data Output (DQ ...

Page 40

... OE t VLHT WE CE Data t VCS V CC SAX : Sector Address for initial sector SAY : Sector Address for next sector Note byte mode Figure 16 40 /MBM29LV200BC -70/-90/-12 t VLHT t WPP t OESP t CSP AC Waveforms for Sector Protection Timing Diagram -70/-90/-12 SAY t VLHT 01H t OE ...

Page 41

... Suspend Erasing WE Erase Erase Suspend Read Toggle DQ and with OE Note read from the erase-suspended sector. 2 /MBM29LV200BC -70/-90/-12 Program or Erase Command Sequence VLHT Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure -70/-90/- VLHT ...

Page 42

... VIDR Add Data SPAX: Sector Address to be protected SPAY : Next Sector Address to be protected TIME-OUT : Time-Out window = 150 s (min) Figure 19 42 /MBM29LV200BC -70/-90/-12 SPAX TIME-OUT 60H 60H Extended Sector Protection Timing Diagram -70/-90/-12 SPAX SPAY 60H 40H 01H t OE ...

Page 43

... MBM29LV200TC EMBEDDED ALGORITHMS Increment Address * : The sequence is applied for The addresses differ from 8 mode. Figure 20 /MBM29LV200BC -70/-90/-12 Start Write Program Command Sequence (See below) Data Polling Device No Last Address ? Yes Programming Completed Program Command Sequence* (Address/Command): 555H/AAH 2AAH/55H 555H/A0H Program Address/Program Data 16 mode ...

Page 44

... MBM29LV200TC EMBEDDED ALGORITHMS Chip Erase Command Sequence* (Address/Command The sequence is applied for The addresses differ from 44 /MBM29LV200BC -70/-90/-12 Start Write Erase Command Sequence (See below) Data Polling or Toggle Bit Successfully Completed Erasure Completed Individual Sector/Multiple Sector* Erase Command Sequence (Address/Command): 555H/AAH 555H/AAH ...

Page 45

... Read (DQ 0 Addr Fail Note rechecked even Figure 22 /MBM29LV200BC -70/-90/- Byte address for programming 7 = Any of the sector addresses within the sector being erased during Yes sector erase or multiple sector = Data? erases operation = Any of the sector addresses within ...

Page 46

... MBM29LV200TC Note rechecked even changing to “1” /MBM29LV200BC -70/-90/-12 Start Read ( Addr. = "H" or "L" Toggle 6 ? Yes Yes Read ( Addr Toggle 6 ? Yes Fail Pass = “1” because DQ may stop toggling at the same time as ...

Page 47

... MBM29LV200TC Increment PLSCNT No PLSCNT = 25? Yes Remove V from A ID Write Reset Command Device Failed * : byte mode Figure 24 /MBM29LV200BC -70/-90/-12 Start Setup Sector Addr PLSCNT = RESET = ...

Page 48

... MBM29LV200TC Notes: 1. All protected sectors are unprotected. 2. All previously protected sectors are protected once again. Figure 25 48 /MBM29LV200BC -70/-90/-12 Start RESET = V ID (Note 1) Perform Erase or Program Operations RESET = V IH Temporary Sector Unprotection Completed (Note 2) Temporary Sector Unprotection Algorithm -70/-90/-12 ...

Page 49

... FAST MODE ALGORITHM Device is Operating in Temporary Sector Unprotection Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed Figure 26 /MBM29LV200BC -70/-90/-12 Start RESET = V ID Wait Extended Sector Protection Entry? Yes To Setup Sector Protection Write XXXH/60H PLSCNT = 1 To Sector Protection ...

Page 50

... MBM29LV200TC FAST MODE ALGORITHM Increment Address * : The sequence is applied for The addresses differ from Figure 27 50 /MBM29LV200BC -70/-90/-12 Start 555H/AAH 2AAH/55H 555H/20H XXXH/A0H Program Address/Program Data Data Polling Device No Verify Byte? Yes No Last Address ? Yes Programming Completed XXXH/90H XXXH/F0H 16 mode. 8 mode. Embedded Program ...

Page 51

... Chip Programming Time Program/Erase Cycle 100,000 TSOP(I) PIN CAPACITANCE Parameter Parameter Description Symbol C Input Capacitance IN C Output Capacitance OUT C Control Pin Capacitance IN2 Note: Test conditions T = 25° 1.0 MHz A /MBM29LV200BC -70/-90/-12 Limits Unit Typ. Max. — sec — 16 360 — 8 300 — 2.1 6.2 sec — ...

Page 52

... LEAD No. 1 INDEX 24 19.00±0.20 (.748±.008) 0.10(.004) * 18.40±0.20 (.724±.008) 20.00±0.20 (.787±.008) 1996 FUJITSU LIMITED F48030S-2C /MBM29LV200BC -70/-90/-12 48 Details of "A" part "A" 0.15(.006 12.00±0.20 (.472±.008) 11.50REF (.460) 0.50(.0197) TYP 0.15±0.05 (.006±.002) 0.50± ...

Page 53

... MBM29LV200TC 44-pin plastic SOP (FPT-44P-M16) +0.25 28.45 1.120 –0.20 44 INDEX LEAD No. 1 1.27(.050)TYP 0.40 0.10(.004) .016 26.67(1.050)REF 1998 FUJITSU LIMITED F44023S-4C-4 C /MBM29LV200BC -70/-90/-12 +.010 –.008 23 13.00±0.10 16.00±0.20 (.512±.004) (.630±.008) 22 +0.10 +0.10 +.004 0.20 .008 –0.05 –0.15 –.006 Ø0.13(.005) M +.004 (Stand off) – ...

Page 54

... Tel: (65) 281-0770 Fax: (65) 281-0220 http://www.fmap.com.sg/ F9912 FUJITSU LIMITED Printed in Japan 54 /MBM29LV200BC -70/-90/-12 All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document are presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use ...

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