MT4LC8M8C2DJ-5S Micron Semiconductor Products, MT4LC8M8C2DJ-5S Datasheet
MT4LC8M8C2DJ-5S
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MT4LC8M8C2DJ-5S Summary of contents
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... ** version and A12 on P4 version DJ 8 MEG x 8 EDO DRAM PART NUMBERS TG -5 PART NUMBER -6 MT4LC8M8C2DJ-x MT4LC8M8C2DJ-x S MT4LC8M8C2TG-x None MT4LC8M8C2TG MT4LC8M8P4DJ-x MT4LC8M8P4DJ-x S MT4LC8M8P4TG-x MT4LC8M8P4TG speed GENERAL DESCRIPTION The 8 Meg x 8 DRAM is a high-speed CMOS, dy- namic random-access memory devices containing 67,108,864 bits and designed to operate from ...
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WE# CAS# NO. 2 CLOCK GENERATOR COLUMN- ADDRESS 10 BUFFER(10) REFRESH CONTROLLER A0- A12 REFRESH COUNTER 13 ROW- ADDRESS 13 BUFFERS (13) NO. 1 CLOCK RAS# GENERATOR WE# CAS# NO. 2 CLOCK GENERATOR COLUMN- ADDRESS 11 BUFFER(11) REFRESH CONTROLLER A0- ...
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GENERAL DESCRIPTION (continued) uniquely addressed via the address bits. First, the row address is latched by the RAS# signal, then the column address is latched by CAS#. Both devices provide EDO- PAGE-MODE operation, allowing for fast successive data operations (READ, ...
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EDO PAGE MODE (continued) other cycles, the outputs are disabled at t RAS# and CAS# are HIGH or at WHZ after WE# transi- t tions LOW. The OFF time is referenced from the rising edge of RAS# or CAS#, whichever ...
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ABSOLUTE MAXIMUM RATINGS* Voltage on V Relative to V ................ -1V to +4. Voltage on NC, Inputs or I/O Pins Relative to V ....................................... -1V to +4.6V SS Operating Temperature, T (ambient) ... 0°C to +70°C A Storage ...
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I OPERATING CONDITIONS AND MAXIMUM LIMITS CC (Notes +3.3V ±0.3V) CC PARAMETER/CONDITION STANDBY CURRENT: TTL (RAS# = CAS STANDBY CURRENT: CMOS (RAS# = CAS 0.2V; DQs may ...
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CAPACITANCE (Note: 2) PARAMETER Input Capacitance: Address pins Input Capacitance: RAS#, CAS#, WE#, OE# Input/Output Capacitance ELECTRICAL CHARACTERISTICS (Notes 10, 11, 12 CHARACTERISTICS PARAMETER Access time from column address Column-address setup ...
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AC ELECTRICAL CHARACTERISTICS (Notes 10, 11, 12 CHARACTERISTICS PARAMETER OE# setup prior to RAS# during HIDDEN REFRESH cycle EDO-PAGE-MODE READ or WRITE cycle time EDO-PAGE-MODE READ-WRITE cycle time Access time from RAS# RAS# ...
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NOTES 1. All voltages referenced This parameter is sampled. V MHz 25° dependent on output loading and cycle CC rates. Specified values are obtained with mini- mum cycle time and ...
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V IH RAS CRP V CAS ASR V IH ROW ADDR WE OE TIMING PARAMETERS -5 SYMBOL MIN ...
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V IH RAS CRP CAS ASR V IH ADDR ROW IOH DQ V IOL TIMING PARAMETERS -5 SYMBOL MIN ...
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WRITE and READ-MODIFY-WRITE cycles RAS CRP V IH CAS ASR V IH ADDR V ROW WE IOH DQ V IOL ...
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V IH RAS CSH t CRP V CAS RAD t ASR t RAH V IH ADDR V ROW OPEN OE# ...
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EDO-PAGE-MODE EARLY WRITE CYCLE V IH RAS CSH t CRP V IH CAS RAD t ASR t RAH V IH ADDR ROW WCS ...
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WRITE and READ-MODIFY-WRITE cycles RAS CRP V IH CAS RAD t ASR t RAH V IH ADDR ROW WE RAC V IOH ...
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EDO-PAGE-MODE READ EARLY WRITE CYCLE V IH RAS CRP t RCD V IH CAS RAD t ASR t RAH V IH ADDR ROW WE IOH DQ OPEN ...
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V IH RAS CRP V CAS ASR V IH ADDR WE OE TIMING PARAMETERS -5 SYMBOL MIN MAX ...
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V IH RAS CRP V IH CAS ASR V IH ADDR RAS RPC CSR V IH CAS# ...
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V IH RAS CRP CAS ASR t RAH V IH ADDR ROW OE TIMING PARAMETERS -5 SYMBOL MIN MAX MIN t ...
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RAS RPC CSR V IH CAS WRP TIMING PARAMETERS -5 SYMBOL MIN MAX MIN t CHD 15 ...
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PIN #1 ID .050 (1.27) TYP .024 (0.61) .032 (0.82) .026 (0.67) SEATING PLANE NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. 2. Package width and length do ...
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TYP PIN 1 ID +0.07 0.43 -0.13 NOTE: 1. All dimensions in millimeters MAX or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold protrusion is .25mm per side. 8000 S. ...