MT29F1G16ABBDAH4-IT:D Micron Semiconductor Products, MT29F1G16ABBDAH4-IT:D Datasheet

MT29F1G16ABBDAH4-IT:D

Manufacturer Part Number

MT29F1G16ABBDAH4-IT:D

Description

Manufacturer

Micron Semiconductor Products

Datasheet

1.MT29F1G16ABBDAH4-ITD.pdf (93 pages)

Specifications of MT29F1G16ABBDAH4-IT:D

Pack_quantity

210

Comm_code

85423269

Lead_time

Eccn

3A991B1A

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

BOSTOCK HK LIMITED

Part Number:

MT29F1G16ABBDAH4-IT:D

Manufacturer:

Micron Technology Inc

Quantity:

10 000

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NAND Flash Memory

MT29F1G08ABADAWP, MT29F1G08ABBDAH4,

MT29F1G08ABBDAHC, MT29F1G16ABBDAH4,

MT29F1G16ABBDAHC, MT29F1G08ABADAH4

Features

PDF: 09005aef83e5ffed

m68a.pdf – Rev. D 06/10 EN

• Open NAND Flash Interface (ONFI) 1.0-compliant

• Single-level cell (SLC) technology

• Organization

• Asynchronous I/O performance

• Array performance

• Command set: ONFI NAND Flash Protocol

• Advanced command set

• Operation status byte provides software method for

• Internal data move operations supported within the

‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by

– Page size x8: 2112 bytes (2048 + 64 bytes)

– Page size x16: 1056 words (1024 + 32 words)

– Block size: 64 pages (128K + 4K bytes)

– Device size: 1Gb: 1024 blocks

–

– Read page: 25µs

– Program page: 200µs (TYP, 3.3V and 1.8V)

– Erase block: 700µs (TYP)

– Program page cache mode

– Read page cache mode

– One-time programmable (OTP) mode

– Read unique ID

– Internal data move

detecting

– Operation completion

– Pass/fail condition

– Write-protect status

device from which data is read

Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.

RC/

WC: 20ns (3.3V), 25ns (1.8V)

Micron Confidential and Proprietary

• Ready/busy# (R/B#) signal provides a hardware

• WP# signal: write protect entire device

• First block (block address 00h) is valid when ship-

• Block 0 requires 1-bit ECC if PROGRAM/ERASE cy-

• RESET (FFh) required as first command after power-

• Alternate method of device initialization (Nand_In-

• Quality and reliability

• Operating Voltage Range

• Operating temperature:

• Package

Notes:

method for detecting operation completion

ped from factory with ECC. For minimum required

ECC, see Error Management.

cles are less than 1000

it) after power up

– Data retention: 10 years

– V

– Commercial: 0°C to +70°C

– Extended (ET): –40ºC to +85ºC

– 48-pin TSOP type 1, CPL

– 63-ball VFBGA

Micron Technology, Inc. reserves the right to change products or specifications without notice.

1Gb x8, x16: NAND Flash Memory

: 2.7–3.6V

: 1.7–1.95V

1. The ONFI 1.0 specification is available at

2. CPL = Center parting line.

3. See Electrical Specifications for

4. Available only in the 1.8V VFBGA package.

5. Supported only with ECC disabled.

www.onfi.org.

PROG_ECC specifications.

(contact factory)

Preliminary

Features

R_ECC and

‡

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