MT29F1G16ABBDAH4-IT:D Micron Semiconductor Products, MT29F1G16ABBDAH4-IT:D Datasheet

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MT29F1G16ABBDAH4-IT:D

Manufacturer Part Number
MT29F1G16ABBDAH4-IT:D
Description
Manufacturer
Micron Semiconductor Products
Datasheet

Specifications of MT29F1G16ABBDAH4-IT:D

Pack_quantity
210
Comm_code
85423269
Lead_time
56
Eccn
3A991B1A
NAND Flash Memory
MT29F1G08ABADAWP, MT29F1G08ABBDAH4,
MT29F1G08ABBDAHC, MT29F1G16ABBDAH4,
MT29F1G16ABBDAHC, MT29F1G08ABADAH4
Features
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
• Open NAND Flash Interface (ONFI) 1.0-compliant
• Single-level cell (SLC) technology
• Organization
• Asynchronous I/O performance
• Array performance
• Command set: ONFI NAND Flash Protocol
• Advanced command set
• Operation status byte provides software method for
• Internal data move operations supported within the
‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
– Page size x8: 2112 bytes (2048 + 64 bytes)
– Page size x16: 1056 words (1024 + 32 words)
– Block size: 64 pages (128K + 4K bytes)
– Device size: 1Gb: 1024 blocks
– Read page: 25µs
– Program page: 200µs (TYP, 3.3V and 1.8V)
– Erase block: 700µs (TYP)
– Program page cache mode
– Read page cache mode
– One-time programmable (OTP) mode
– Read unique ID
– Internal data move
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
device from which data is read
Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.
t
RC/
t
WC: 20ns (3.3V), 25ns (1.8V)
3
5
5
Micron Confidential and Proprietary
3
1
1
• Ready/busy# (R/B#) signal provides a hardware
• WP# signal: write protect entire device
• First block (block address 00h) is valid when ship-
• Block 0 requires 1-bit ECC if PROGRAM/ERASE cy-
• RESET (FFh) required as first command after power-
• Alternate method of device initialization (Nand_In-
• Quality and reliability
• Operating Voltage Range
• Operating temperature:
• Package
Notes:
method for detecting operation completion
ped from factory with ECC. For minimum required
ECC, see Error Management.
cles are less than 1000
on
it) after power up
– Data retention: 10 years
– V
– V
– Commercial: 0°C to +70°C
– Extended (ET): –40ºC to +85ºC
– 48-pin TSOP type 1, CPL
– 63-ball VFBGA
Micron Technology, Inc. reserves the right to change products or specifications without notice.
CC
CC
1Gb x8, x16: NAND Flash Memory
: 2.7–3.6V
: 1.7–1.95V
1. The ONFI 1.0 specification is available at
2. CPL = Center parting line.
3. See Electrical Specifications for
4. Available only in the 1.8V VFBGA package.
5. Supported only with ECC disabled.
www.onfi.org.
t
PROG_ECC specifications.
4
(contact factory)
© 2010 Micron Technology, Inc. All rights reserved.
2
Preliminary
t
Features
R_ECC and

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