MT46V16M16TG-6T Micron Semiconductor Products, MT46V16M16TG-6T Datasheet

MT46V16M16TG-6T

Manufacturer Part Number

MT46V16M16TG-6T

Description

4 Meg x 16 x 4banks, CL=2.5, 167MHz double data rate (DDR) SDRAM

Manufacturer

Micron Semiconductor Products

Datasheet

1.MT46V64M4TG-6T.pdf (8 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MT46V16M16TG-6T

Manufacturer:

MICRON

Quantity:

485

Company:

Meier Automation Equipment Co., Limited

Part Number:

MT46V16M16TG-6T

Manufacturer:

MICRON

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

MT46V16M16TG-6T:F

Manufacturer:

MICRON

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

MT46V16M16TG-6T:FTR

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MT46V16M16TG-6T:K

Manufacturer:

ROHM

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MT46V16M16TG-6TF

Manufacturer:

MICRON

Quantity:

120

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MT46V16M16TG-6TIT

Manufacturer:

Micron

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MT46V16M16TG-6TIT:F

Manufacturer:

MICRON

Quantity:

Current page: 1 of 8
Download datasheet (153Kb)

DOUBLE DATA RATE

(DDR) SDRAM

256Mb: x4, x8, x16 DDR333 SDRAM

256Mx4x8x16DDR333_B.p65 – Rev. B; Pub. 10/01

‡ PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY

FEATURES

• 167 MHz Clock, 333 Mb/s/p data rate

• V

• Bidirectional data strobe (DQS) transmitted/

• Internal, pipelined double-data-rate (DDR)

• Differential clock inputs (CK and CK#)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; center-

• DLL to align DQ and DQS transitions with CK

• Four internal banks for concurrent operation

• Data mask (DM) for masking write data (x16 has

• Programmable burst lengths: 2, 4, or 8

• Concurrent Auto Precharge option supported

• Auto Refresh and Self Refresh Modes

• FBGA package available

• 2.5V I/O (SSTL_2 compatible)

•

• Backwards compatible with DDR200 and DDR266

OPTIONS

• Configuration

• Plastic Package

• Timing - Cycle Time

• Self Refresh

NOTE: 1. Supports PC2700 modules with 2.5-3-3 timing

MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION AND DATA SHEET SPECIFICATIONS.

received with data, i.e., source-synchronous data

capture (x16 has two - one per byte)

architecture; two data accesses per clock cycle

aligned with data for WRITEs

two - one per byte)

64 Meg x 4 (16 Meg x 4 x 4 banks)

32 Meg x 8 (8 Meg x 8 x 4 banks)

16 Meg x 16 (4 Meg x 16 x 4 banks)

66-Pin TSOP (OCPL)

60-Ball FBGA (16x9mm)

Standard

RAS lockout (

6ns @ CL = 2.5 (DDR333B–FBGA)

6ns @ CL = 2.5 (DDR333B–TSOP)

7.5ns @ CL = 2 (DDR266A)

= +2.5V ±0.2V, V

2. Supports PC2100 modules with 2-3-3 timing

RAP =

RCD)

Q = +2.5V ±0.2V

PART NUMBER

16M16

64M4

32M8

none

-75Z

-6T

T G

-6

MT46V64M4 – 16 Meg x 4 x 4 banks

MT46V32M8 – 8 Meg x 8 x 4 banks

MT46V16M16 – 4 Meg x 16 x 4 banks

For the latest data sheet revisions, please refer to the Micron

Web site:

DDR333 COMPATIBILITY

quirements thus assuring full backwards compatibility

with current DDR designs. In addition, these devices

support concurrent auto-precharge and

for improved timing performance.

DDR333 device will support an (

odic refresh interval of 7.8us.

point-to-point applications where the FBGA package

is intended for the multi-drop systems.

cations and functionality unless specified herein.

CONFIGURATION

KEY TIMING PARAMETERS

NOTE: 1. CL = CAS (Read) Latency

GRADE

Architecture

Configuration

Refresh Count

Row Addressing

Bank Addressing

Column Addressing

SPEED

-75Z

DDR333 meets or surpasses all DDR266 timing re-

The Micron 256Mb data sheet provides full specifi-

-6T

-6

The standard 66-pin TSOP package is offered for

DDR333 SDRAM Addendum

2. With a 50/50 clock duty cycle and a minimum clock

3. -75, -8 are also available; see base data sheet.

www.micron.com/dramds

133 MHz

CL = 2

rate @ CL = 2 ( -75Z) and CL = 2.5 (-6, -6T).

Micron Technology, Inc., reserves the right to change products or specifications without notice.

CLOCK RATE

16 Meg x 4 x 4 banks 8 Meg x 8 x 4 banks 4 Meg x 16 x 4 banks

2K (A0–A9, A11)

64 Meg x 4

8K (A0–A12)

4 (BA0, BA1)

CL = 2.5

167 MHz

133 MHz

256Mb: x4, x8, x16

WINDOW

DATA-OUT ACCESS DQS-DQ

32 Meg x 8

2.15ns

8K (A0–A12)

4 (BA0, BA1)

1K (A0–A9)

2.0ns

2.5ns

REFI) average peri-

PRELIMINARY

WINDOW SKEW

±0.70ns

±0.75ns

The 256Mb,

RAS lockout

16 Meg x 16

512 (A0– A8)

8K (A0–A12)

4 (BA0, BA1)

+0.35ns

+0.45ns

+0.50ns

‡

Related parts for MT46V16M16TG-6T

MT46V16M16TG-6T Summary of contents

Page 1

DOUBLE DATA RATE (DDR) SDRAM FEATURES • 167 MHz Clock, 333 Mb/s/p data rate • +2.5V ±0.2V +2.5V ±0. • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 ...

Page 2

FBGA 60-BALL PACKAGE DIMENSION 0.850 ±0.075 SEATING PLANE C 0.10 C 6.40 1.80 CTR 61X 0.45 0.80 TYP SOLDER BALL DIAMETER REFERS TO POST REFLOW PIN A1 ID CONDITION. THE PRE- REFLOW DIAMETER IS Ø 0.40 BALL A9 BALL A1 ...

Page 3

TSOP PACKAGE DIMENSION 22.22 ± 0.08 0.65 TYP 0.32 ± .075 TYP PIN #1 ID 1.20 MAX GAGE PLANE 0.25 +0.10 0.10 -0.05 0.80 TYP 0.50 ±0.10 DETAIL A NOTE: 1. All dimensions in millimeters. 2. Package width and ...

Page 4

PIN DESCRIPTIONS BALL / PIN NUMBERS FBGA TSOP SYMBOL G2, G3 45, 46 CK, CK CKE H8 24 CS# H7, G8, G7 23, 22, 21 RAS#, CAS#, WE F7, 3F 20, 47 LDM, UDM J8,J7 ...

Page 5

PIN DESCRIPTIONS (continued) BALL / PIN NUMBERS FBGA TSOP SYMBOL A8, B9 DQ0-2 C9, C7 DQ3-5 D7, E9, E1 11, 13, 54 DQ6-8 D3, D1, C3 56, 57, 59 DQ9-11 C1, B3, ...

Page 6

GENERAL DESCRIPTION The DDR333 SDRAM is a high-speed CMOS, dy- namic random-access memory that operates at a fre- quency of 167 MHz ( t CK=6ns) with a peak data trans- fer rate of 333Mb/s/p. DDR333 continues to use the JEDEC ...

Page 7

ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Notes: 1-5, 14-17, 33; notes appear in DDR200/266 data sheets) (0°C ≤ T ≤ 70° +2.5V ±0.2V CHARACTERISTICS PARAMETER Access window of DQs from CK/CK# CK ...

Page 8

S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron is a registered trademark and the Micron logo and M logo are trademarks of Micron Technology, Inc. 256Mb: x4, ...

Related keywords

MT46V16M16TG-6T datasheet
MT46V16M16TG-6T data sheet
MT46V16M16TG-6T pdf datasheet
MT46V16M16TG-6T component
MT46V16M16TG-6T part
MT46V16M16TG-6T distributor
MT46V16M16TG-6T RoHS
MT46V16M16TG-6T datasheet download