MT28F200B5SG-8BET Micron Semiconductor Products, MT28F200B5SG-8BET Datasheet

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MT28F200B5SG-8BET

Manufacturer Part Number
MT28F200B5SG-8BET
Description
256K x 8; 5V only, dual supply, smart 5 boot block flash memory
Manufacturer
Micron Semiconductor Products
Datasheet
FLASH MEMORY
FEATURES
• Five erase blocks:
• Smart 5 technology (B5):
• Address access times: 60ns, 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
• Byte-wide READ and WRITE only
• TSOP and SOP packaging options
OPTIONS
• Timing
• Configurations
• Boot Block Starting Word Address
• Operating Temperature Range
• Packages
2Mb Smart 5 Boot Block Flash Memory
F50.p65 – Rev. 1/00
60ns access
80ns access
80ns access
256K x 8
128K x 16/256K x 8
Top (1FFFFH)
Bottom (00000H)
Commercial (0 C to +70 C)
Extended (-40 C to +85 C)
Plastic 44-pin SOP (600 mil)
Plastic 48-pin TSOP Type 1
Plastic 40-pin TSOP
(12mm x 20mm)
(10mm x 20mm)
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Two main memory blocks
5V 10% V
5V 10% V
12V 5% V
(MT28F200B5, 128K x 16/256K x 8)
(MT28F002B5, 256K x 8)
programming
programming
MT28F200B5SG-8 T
CC
PP
PP
Part Number Example:
application/production
compatibility production
MARKING
MT28F002B5
MT28F200B5
None
-8 ET
WG
VG
SG
ET
-6
-8
T
B
SMART 5 BOOT BLOCK FLASH MEMORY
1
MT28F002B5
MT28F200B5
5V Only, Dual Supply (Smart 5)
GENERAL DESCRIPTION
are nonvolatile, electrically block-erasable (flash), pro-
grammable, read-only memories containing 2,097,152
bits organized as 262,144 bytes (8 bits) or 131,072
words (16 bits). Writing or erasing the device is done
with a 5V V
formed with a 5V V
advances, 5V V
tion programming. For backward compatibility with
SmartVoltage technology, 12V V
maximum of 100 cycles and may be connected for up
to 100 cumulative hours. These devices are fabricated
with Micron’s advanced CMOS floating-gate process.
into five separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure or
overwrite, the devices feature a hardware-protected
boot block. Writing or erasing the boot block requires
either applying a super-voltage to the RP# pin or driv-
ing WP# HIGH in addition to executing the normal
write or erase sequences. This block may be used to store
code implemented in low-level system recovery. The
remaining blocks vary in density and are written and
erased with no additional security measures.
flash/htmls/datasheets.html)
40-Pin TSOP Type I 48-Pin TSOP Type I
The MT28F002B5 (x8) and MT28F200B5 (x16/x8)
The MT28F002B5 and MT28F200B5 are organized
Please refer to
Micron Technology, Inc., reserves the right to change products or specifications without notice.
PP
PP
voltage, while all operations are per-
Micron’s Web site
is optimal for application and produc-
44-Pin SOP
CC
. Due to process technology
for the latest data sheet.
PP
(www.micron.com/
is supported for a
©2000, Micron Technology, Inc.
2Mb

Related parts for MT28F200B5SG-8BET

MT28F200B5SG-8BET Summary of contents

Page 1

... Packages Plastic 44-pin SOP (600 mil) Plastic 48-pin TSOP Type 1 (12mm x 20mm) Plastic 40-pin TSOP (10mm x 20mm) Part Number Example: MT28F200B5SG-8 T 2Mb Smart 5 Boot Block Flash Memory F50.p65 – Rev. 1/00 SMART 5 BOOT BLOCK FLASH MEMORY MT28F002B5 MT28F200B5 5V Only, Dual Supply (Smart 5) ...

Page 2

... DQ9 18 27 DQ13 DQ2 19 26 DQ5 DQ10 20 25 DQ12 DQ3 21 24 DQ4 DQ11 ORDER NUMBER AND PART MARKING MT28F200B5SG-6 B MT28F200B5SG-6 T MT28F200B5SG-8 B MT28F200B5SG-8 T MT28F200B5SG-8 BET MT28F200B5SG-8 TET 40 A17 A10 35 DQ7 34 DQ6 33 DQ5 32 DQ4 ...

Page 3

BYTE# I/O Control Logic Addr. A0-A16/(A17) Buffer/ Latch A9 Power (Current) Control WP# CE# Command OE# Execution WE# Logic RP NOTE 1. Does not apply to MT28F002B5. 2Mb Smart 5 Boot Block Flash Memory F50.p65 ...

Page 4

PIN DESCRIPTIONS 44-PIN SOP 40-PIN TSOP 48-PIN TSOP NUMBERS NUMBERS NUMBERS – 47 11, 10 21, 20, 19, 25, 24, 23, 7, ...

Page 5

TRUTH TABLE (MT28F200B5) FUNCTION Standby RESET READ READ (word mode) READ (byte mode) Output Disable WRITE/ERASE (EXCEPT BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM WRITE SETUP 4 WRITE (word mode) 4 WRITE (byte mode) 5 READ ARRAY 2, 7 WRITE/ERASE ...

Page 6

TRUTH TABLE (MT28F002B5) FUNCTION Standby RESET READ READ Output Disable WRITE/ERASE (EXCEPT BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM WRITE SETUP 4 WRITE 5 READ ARRAY WRITE/ERASE (BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM 3, 6 ERASE CONFIRM WRITE SETUP ...

Page 7

FUNCTIONAL DESCRIPTION The MT28F002B5 and MT28F200B5 flash memory incorporate a number of features ideally suited for system firmware. The memory array is segmented into individual erase blocks. Each block may be erased without affecting data stored in other blocks. These ...

Page 8

COMMAND EXECUTION LOGIC (CEL) The CEL receives and interprets commands to the device. These commands control the operation of the ISM and the read path (i.e., memory array, ID register or status register). Commands may be issued to the CEL ...

Page 9

V or the WP# pin held HIGH until the ERASE HH or WRITE is completed. The V pin must 12V) when the boot block is written to or erased. The MT28F002B5 and MT28F200B5 ...

Page 10

INPUT OPERATIONS The DQ pins are used either to input data to the array or to input a command to the CEL. A command input issues an 8-bit command to the CEL to control the mode of operation of the ...

Page 11

COMMAND SET To simplify writing of the memory blocks, the MT28F002B5 and MT28F200B5 incorporate an ISM that controls all internal algorithms for the WRITE and ERASE cycles. An 8-bit command set is used to control the device. Details on how ...

Page 12

COMMAND EXECUTION Commands are issued to bring the device into differ- ent operational modes. Each mode allows specific op- erations to be performed. Several modes require a sequence of commands to be written before they are reached. The following section ...

Page 13

WRITE. To execute a null WRITE, FFH must be written when BYTE# is LOW, or FFFFH must be written when BYTE# is HIGH. Once the ISM status bit (SR7) has been set, the device will be in the ...

Page 14

WRITE/ERASE CYCLE ENDURANCE The MT28F002B5 and MT28F200B5 are designed and fabricated to meet advanced firmware storage re- quirements. To ensure this level of reliability 10% during WRITE or ERASE cycles. Due to process technology advances, 5V ...

Page 15

SELF-TIMED WRITE SEQUENCE (WORD or BYTE WRITE) Start WRITE 40H or 10H WRITE Word or Byte Address/Data STATUS REGISTER READ SR7 = 1? YES Complete Status Check (optional) WRITE Complete NOTE: 1. Sequence may be repeated ...

Page 16

SELF-TIMED BLOCK ERASE SEQUENCE Start WRITE 20H WRITE D0H, Block Address STATUS REGISTER READ NO SR7 = 1? Suspend ERASE? YES 2 Complete Status Check (optional) 3 ERASE Complete NOTE: 1. Sequence may be repeated to ...

Page 17

Smart 5 Boot Block Flash Memory F50.p65 – Rev. 1/00 SMART 5 BOOT BLOCK FLASH MEMORY ERASE SUSPEND/RESUME SEQUENCE Start (ERASE in progress) WRITE B0H (ERASE SUSPEND STATUS REGISTER READ NO SR7 = 1? YES ...

Page 18

ABSOLUTE MAXIMUM RATINGS* Voltage on V Supply CC Relative to V ................................ -0.5V to +6V** SS Input Voltage Relative to V ................ -0.5V to +6V Voltage Relative to V ............... -0.5V to +12. RP ...

Page 19

CAPACITANCE ( MHz) A PARAMETER/CONDITION Input Capacitance Output Capacitance READ AND STANDBY CURRENT DRAIN Commercial Temperature (0 C PARAMETER/CONDITION READ CURRENT: WORD-WIDE, TTL INPUT LEVELS (CE OE ...

Page 20

READ TIMING PARAMETERS ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS TEST CONDITION 1 Commercial Temperature ( CHARACTERISTICS PARAMETER READ cycle time Access time from CE# Access time from OE# Access time from address RP# HIGH to output valid ...

Page 21

AC TEST CONDITION 1 Input pulse levels ............................................... 0.4V to 2.4V Input rise and fall times ................................................ <10ns Input timing reference level ............................... 0.8V and 2V Output timing reference level ........................... 0.8V and 2V Output load ................................. 1 TTL gate ...

Page 22

1)-A16/(A17 DQ0-DQ7 DQ8-DQ14 RP TIMING ...

Page 23

RECOMMENDED DC WRITE/ERASE CONDITIONS Commercial Temperature (0 C PARAMETER/CONDITION V WRITE/ERASE lockout voltage PP V voltage during WRITE/ERASE operation PP V voltage during WRITE/ERASE operation PP Boot block unlock voltage V WRITE/ERASE lockout voltage CC WRITE/ERASE CURRENT DRAIN Commercial Temperature ...

Page 24

SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS TEST CONDITION 1 Commercial Temperature ( CHARACTERISTICS PARAMETER WRITE cycle time WE# HIGH pulse width CE# HIGH pulse width CE# pulse width WE# pulse width TEST CONDITION 2 ...

Page 25

SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND RECOM- MENDED AC OPERATING CONDITIONS: WE#-CONTROLLED WRITES Commercial Temperature ( CHARACTERISTICS PARAMETER Address setup time to WE# HIGH Address hold time from WE# HIGH Data setup time to WE# HIGH ...

Page 26

SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND RECOM- MENDED AC OPERATING CONDITIONS: CE#-CONTROLLED WRITES Commercial Temperature ( CHARACTERISTICS PARAMETER Address setup time to CE# HIGH Address hold time from CE# HIGH Data setup time to CE# HIGH ...

Page 27

V IH A0-A16/(A17) Note CMD DQ0-DQ7/ 2 DQ0-DQ15 ...

Page 28

V IH A0-A16/(A17) Note CMD DQ0-DQ7 DQ0-DQ15 ...

Page 29

TYP 1 PIN #1 INDEX .010 (0.25) .006 (0.15) 20 .007 (0.18) .005 (0.13) NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold ...

Page 30

TYP PIN #1 INDEX NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold protrusion is .01” per side. 2Mb ...

Page 31

TYP 1 PIN #1 INDEX .010 (0.25) .006 (0.15) 24 .007 (0.18) .005 (0.12) NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold ...

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