BGD712C,112 NXP Semiconductors, BGD712C,112 Datasheet

AMP GAIN POWER 750MHZ SOT115J

BGD712C,112

Manufacturer Part Number
BGD712C,112
Description
AMP GAIN POWER 750MHZ SOT115J
Manufacturer
NXP Semiconductors
Type
Power Amplifierr
Datasheet

Specifications of BGD712C,112

Applications
CATV
Number Of Circuits
1
Current - Supply
395mA
Mounting Type
Chassis Mount
Package / Case
SOT-115J
Number Of Channels
1
Frequency (max)
750MHz
Power Supply Requirement
Single
Single Supply Voltage (typ)
24V
Single Supply Voltage (max)
30V
Package Type
SOT-115J
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Operating Temperature Classification
Commercial
Operating Temp Range
-20C to 100C
Pin Count
7
Mounting
Screw
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934059734112
1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Hybrid high dynamic range amplifier module in SOT115J package operating at a supply
voltage of 24 V (DC).
Table 1.
[1]
Symbol
G
I
tot
p
BGD712C
750 MHz, 18.5 dB gain power doubler amplifier
Rev. 3 — 29 September 2010
Excellent linearity
Extremely low noise
Excellent return loss properties
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability
CATV systems operating in the 40 MHz to 750 MHz frequency range.
The module normally operates at V
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Parameter
power gain
total current
Quick reference data
B
= 24 V, but is able to withstand supply transients up to 30 V.
Conditions
f = 45 MHz
f = 750 MHz
V
B
= 24 V
[1]
Min
18.2
19
380
Product data sheet
Typ
-
-
-
Max
18.8
20
410
Unit
dB
dB
mA

Related parts for BGD712C,112

BGD712C,112 Summary of contents

Page 1

BGD712C 750 MHz, 18.5 dB gain power doubler amplifier Rev. 3 — 29 September 2010 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module in SOT115J package operating at a supply voltage (DC). CAUTION ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number BGD712C 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T mb BGD712C Product data sheet 750 MHz, 18.5 dB gain power doubler amplifier Pinning Description ...

Page 3

... NXP Semiconductors 5. Characteristics Table 5. Characteristics Bandwidth 40 MHz to 750 MHz; V Symbol Parameter G power gain p SL slope cable equivalent FL flatness of frequency response S input return losses 11 S output return losses 22 ϕ phase response s21 CTB composite triple beat CSO composite second-order distortion NF noise figure ...

Page 4

... NXP Semiconductors 6. Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads DIMENSIONS (mm are the original dimensions UNIT b c max. max. max. 0.51 mm 20.8 9.5 0.25 27.2 0.38 OUTLINE VERSION IEC SOT115J Fig 1 ...

Page 5

... Data sheet status Product data sheet The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Package outline drawings have been updated to the latest version. ...

Page 6

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...

Page 7

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 8

... NXP Semiconductors 10. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Legal information 8.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 6 8 ...

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