BGY887,112 NXP Semiconductors, BGY887,112 Datasheet - Page 3

• Manufacturer Part Number: BGY887,112
• Description: IC AMP PUSH-PULL SOT115J
• Manufacturer: NXP Semiconductors
• Type: Gain Amplifierr

Specifications of BGY887,112

• Operating Frequency: 860 MHz
• Supply Current: 235 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-115
• Number Of Channels: 1 Channel
• Frequency (max): 860MHz
• Power Supply Requirement: Single
• Single Supply Voltage (typ): 24V
• Package Type: SOT-115J
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 7
• Mounting: Screw
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934039280112::BGY887::BGY887

NXP Semiconductors
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; V
Notes
1. f
2. Measured according to DIN45004B:
3. The module normally operates at V
2001 Nov 15
G
SL
FL
S
S
S
CTB
X
CSO
d
V
F
I
SYMBOL
tot
2
11
22
21
mod
o
860 MHz, 21.5 dB gain push-pull amplifier
p
f
measured at f
f
f
f
measured at f
p
q
p
q
r
= 860.25 MHz; V
= 55.25 MHz; V
= 805.25 MHz; V
= 851.25 MHz; V
= 858.25 MHz; V
power gain
slope cable equivalent
flatness of frequency response
input return losses
output return losses
phase response
composite triple beat
cross modulation
composite second order distortion 49 channels flat; V
second order distortion
output voltage
noise figure
total current consumption (DC)
p
p
+ f
+ f
p
q
q
r
PARAMETER
q
p
q
= 44 dBmV;
= 860.5 MHz.
 f
= V
= 44 dBmV;
= V
= V
r
= 849.25 MHz.
o
o
o
6 dB;
;
6 dB;
B
B
= 24 V; T
= 24 V, but is able to withstand supply transients up to 30 V.
f = 50 MHz
f = 860 MHz
f = 40 to 860 MHz
f = 40 to 860 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
f = 50 MHz
49 channels flat; V
measured at 859.25 MHz
49 channels flat; V
measured at 55.25 MHz
measured at 860.5 MHz
note 1
d
f = 50 MHz
f = 550 MHz
f = 600 MHz
f = 650 MHz
f = 750 MHz
f = 860 MHz
note 3
case
im
= 60 dB; note 2
= 30 C; Z
CONDITIONS
3
S
= Z
o
o
o
L
= 44 dBmV;
= 44 dBmV;
= 44 dBmV;
= 75 
21
21.5
0.2

20
18.5
17
15.5
14
20
18.5
17
15.5
14
45




59







MIN.
21.5
22.5
1
0.2
29.5
27.5
23
22
20
27
25
20.5
19
19

64.5
64.5
67.5
77
60.5
4




5
220
TYP.
Product specification
22

2
0.3





+45
70





62
61
61

4.5
5
5
5
5.5
6.5
235
MAX.
BGY887
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
dB
dB
dB
dB
dB
mA
UNIT