BGD702/09,112 NXP Semiconductors, BGD702/09,112 Datasheet - Page 6

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BGD702/09,112

Manufacturer Part Number
BGD702/09,112
Description
MODULE AMP PWR DBLR 750MHZ SOT11
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BGD702/09,112

Applications
CATV
Number Of Circuits
1
Current - Supply
425mA
Mounting Type
Chassis Mount
Package / Case
SOT-115J
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
Other names
934023590112
NXP Semiconductors
Table 4 Bandwidth 40 to 450 MHz; V
Notes
1. f
2. Measured according to DIN45004B:
3. The modules normally operate at V
2001 Nov 27
G
SL
FL
s
s
s
CTB
X
CSO
d
V
NF
I
SYMBOL
tot
11
22
21
2
mod
o
750 MHz, 18.5 dB gain power doubler
amplifier
p
f
measured at f
f
f
f
measured at f
p
q
p
q
r
= 449.25 MHz; V
= 55.25 MHz; V
= 391.25 MHz; V
= 440.25 MHz; V
= 447.25 MHz; V
power gain
slope cable equivalent
flatness of frequency response
input return losses
output return losses
phase response
composite triple beat
cross modulation
composite second order distortion 60 channels flat; V
second order distortion
output voltage
noise figure
total current consumption (DC)
p
p
+ f
+ f
p
q
q
PARAMETER
r
q
p
q
= 46 dBmV;
= 446.5 MHz.
 f
= V
= 46 dBmV;
= V
= V
r
= 438.25 MHz.
o
o
o
6 dB;
;
6 dB;
B
B
= 24 V; T
= 24 V, but are able to withstand supply transients up to V
f = 40 to 450 MHz
f = 40 to 450 MHz
f = 40 to 80 MHz
60 channels flat; V
60 channels flat; V
f = 50 MHz
f = 450 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 450 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 450 MHz
f = 50 MHz
measured at 445.25 MHz
measured at 55.25 MHz
measured at 446.5 MHz
note 1
d
see Table 1
note 3
mb
im
= 60 dB; note 2
= 35 C; Z
CONDITIONS
6
S
= Z
o
o
o
L
= 46 dBmV;
= 46 dBmV;
= 46 dBmV
= 75 
18
18.5
0.2
20
19
18
17
20
19
18
17
45
67
MIN.
18.5
19.2
27
30
29
22
23
24
23
21
425
TYP.
Product specification
B
= 30 V.
19
2
0.3
+45
68
65
65
75
435
MAX.
BGD702
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
mA
UNIT

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