BTA212B-600F NXP Semiconductors, BTA212B-600F Datasheet - Page 3

• Manufacturer Part Number: BTA212B-600F
• Description: Planar passivated high commutation three quadrant triac in a SOT78 (D2PAK) surface mountable plastic package This "series F" triac balances the requirements of commutation performance and gate sensitivity
• Manufacturer: NXP Semiconductors

THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Device does not trigger in the T2-, G+ quadrant.
October 2003
Three quadrant triacs
guaranteed commutation
SYMBOL PARAMETER
R
R
j
j
SYMBOL
I
I
I
V
V
I
SYMBOL
dV
dI
dI
GT
L
H
D
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
th j-mb
th j-a
T
GT
com
com
D
/dt
Semiconductors
/dt
/dt
Thermal resistance
junction to mounting base half cycle
Thermal resistance
junction to ambient
PARAMETER
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Critical rate of change of
commutating current
2
CONDITIONS
full cycle
in free air
CONDITIONS
V
V
V
I
V
V
T
V
CONDITIONS
V
T
waveform; gate open
circuit
V
I
dV
open circuit
V
I
dV
open circuit
T
T(RMS)
T(RMS)
T2+ G+
T2+ G-
T2- G-
T2+ G+
T2+ G-
T2- G-
j
j
D
D
D
D
D
D
DM
DM
DM
= 17 A
= 125 ˚C
= 110 ˚C; exponential
com
com
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 67% V
= 400 V; T
= 400 V; T
/dt = 10V/μs; gate
/dt = 0.1V/μs; gate
= 12 A;
= 12 A;
DRM(max)
T
GT
GT
T
T
DRM(max)
2
= 0.1 A
= 0.1 A
; T
= 0.1 A
= 0.1 A
BTA212B-
= 0.1 A;
BTA212B-
j
j
j
= 125 ˚C;
= 125 ˚C;
= 125 ˚C
;
...D
MIN.
0.25
...D
1.0
3.5
20
BTA212B series D, E and F
-
-
-
-
-
-
-
-
-
MIN.
...D
...E
15
25
25
15
60
16
5
5
5
8
MIN.
-
-
-
...D, E, F
MAX.
...E
...F
1.6
1.5
0.5
10
10
10
25
30
30
25
70
21
32
TYP.
-
Product specification
55
-
-
MAX.
MAX.
...F
25
25
25
30
40
40
30
1.5
2.0
-
-
-
-
Rev 3.000
UNIT
UNIT
A/ms
A/ms
UNIT
V/μs
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V