BTA212B-600F NXP Semiconductors, BTA212B-600F Datasheet - Page 5

Planar passivated high commutation three quadrant triac in a SOT78 (D2PAK) surface mountable plastic package This "series F" triac balances the requirements of commutation performance and gate sensitivity

BTA212B-600F

Manufacturer Part Number
BTA212B-600F
Description
Planar passivated high commutation three quadrant triac in a SOT78 (D2PAK) surface mountable plastic package This "series F" triac balances the requirements of commutation performance and gate sensitivity
Manufacturer
NXP Semiconductors
Datasheet
October 2003
Three quadrant triacs
guaranteed commutation
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
3
2
1
0
2.5
1.5
0.5
Semiconductors
-50
-50
3
2
1
0
(T
IL(25 C)
-50
IGT(25° C)
IL(Tj)
IGT(Tj)
IH(25C)
IH(Tj)
Fig.7. Normalised gate trigger current
j
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
Tj/° C
Tj / C
50
Tj / C
50
50
100
100
100
H
L
(T
(T
j
j
)/ I
)/ I
j
j
T2+ G+
T2+ G-
T2- G-
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
10 2
10 3
10
Fig.10. Typical and maximum on-state characteristic.
1
Fig.11. Transient thermal impedance Z
20
dIcom/dt (A/ms)
0.001
40
30
20
10
commutating current dI
0.01
0
Fig.12. Minimum, critical rate of change of
0.1
0
10
10us
IT / A
1
Vo = 1.175 V
Rs = 0.0316 Ohms
Tj = 125 C
Tj = 25 C
Zth j-mb (K/W)
40
temperature, dV
0.5
0.1ms
BTA212B series D, E and F
60
unidirectional
pulse width t
1ms
1
tp / s
VT / V
10ms
1.5
com
80
com
typ
/dt = 10V/μs.
/dt versus junction
P
D
bidirectional
p
Product specification
.
0.1s
2
t
100
p
max
th j-mb
2.5
1s
t
120
Rev 3.000
, versus
F TYPE
E TYPE
D TYPE
10s
T j (˚C)
3
140

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