ACT108-600D NXP Semiconductors, ACT108-600D Datasheet - Page 3

• Manufacturer Part Number: ACT108-600D
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
ACT108-600D
Product data sheet
Symbol
V
I
I
I
dI
I
V
P
T
T
V
T(RMS)
TSM
2
GM
Fig 1.
stg
j
DRM
t
GM
G(AV)
PP
T
/dt
Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state current
I2t for fusing
rate of rise of on-state current
peak gate current
peak gate voltage
average gate power
storage temperature
junction temperature
peak pulse voltage
IEC 61000-4-5 Standards
1.2 s/50 s waveform
Open Circuit Voltage
Surge Generator
All information provided in this document is subject to legal disclaimers.
Surge pulse
R Gen
2
Rev. 02 — 27 December 2010
Conditions
full sine wave; T
full sine wave; T
t
full sine wave; T
see
t
I
t = 20 μs
positive applied gate voltage
over any 20 ms period
T
see
p
p
T
j
= 16.7 ms
= 10 ms; sine-wave pulse
= 1 A; I
= 25 °C; non-repetitive, off-state;
Figure
Figure 1
150
G
R
Load Model
3; see
= 10 mA; dI
lead
j(init)
j(init)
Figure 4
5 H
L
≤ 71 °C; see
= 25 °C;
= 25 °C; t
G
/dt = 0.2 A/µs
220
R G
p
003aad077
= 20 ms;
Figure 2
DUT
ACT108-600D
AC Thyristor power switch
Min
-
-
-
-
-
-
-
-
-
-40
-
-
© NXP B.V. 2010. All rights reserved.
600
0.32
15
150
125
Max
0.8
8.8
8
50
1
0.1
2
Unit
V
A
A
A
A
A/µs
A
V
W
°C
°C
kV
3 of 14
2
s