BT150S-600R NXP Semiconductors, BT150S-600R Datasheet
BT150S-600R
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BT150S-600R Summary of contents
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... D D ATA SHEET BT150S series Thyristors logic level Product specification DISCRETE SEMICONDUCTORS October 1997 ...
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... The rate of rise of current should not exceed 15 A/μs. 2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less. October 1997 QUICK REFERENCE DATA SYMBOL PARAMETER BT150S (or BT150M Repetitive peak off-state DRM V ...
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... mA DRM(max /dt = 0.2 A/μ 67 125 ˚ DRM(max / A/μ / V/μ kΩ Product specification BT150S series BT150M series MIN. TYP. MAX 3 MIN. TYP. MAX 200 - 0. 0. 1.23 1.8 - 0.4 1.5 0.1 ...
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... Hz VGT(Tj) VGT(25 C) BT151 1.6 1.4 1.2 1 0.8 0.6 0.4 - Fig.6. Normalised gate trigger voltage (25˚C), versus junction temperature Product specification BT150S series BT150M series I TSM T time Tj initial = 25 C max 1000 1 10 ≤ 111˚C. 100 150 . j Rev 1.100 ...
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... I (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT150S series BT150M series BT148 typ max 0 BT148 0.1ms 1ms 10ms 0. pulse width t ...
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... Plastic meets UL94 V0 at 1/8". October 1997 2.38 max 1.1 6.73 max 0.93 max tab 6.22 max 10.4 max 2 0.5 min 3 1 0.8 max (x2) Fig.13. SOT428 : centre pin connected to tab. 7.0 2.15 2.5 4.57 Fig.14. SOT428 : minimum pad sizes for surface mounting . 5 Product specification BT150S series BT150M series seating plane 5.4 4 min 4.6 0.5 0.3 0.5 7.0 1.5 Rev 1.100 ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
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... Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www ...