BTH151S-650R NXP Semiconductors, BTH151S-650R Datasheet - Page 3

• Manufacturer Part Number: BTH151S-650R
• Description: Planar passivated Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage, high repetitive surge current capability and high thermal cyclin
• Manufacturer: NXP Semiconductors

1;3 Semiconductors
Thyristor
High Repetitive Surge
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
March 2001
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
t
t
GT
L
H
D
gt
q
Fig.1. Repetitive surge conditions. I
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
, I
th j-mb
th j-a
D
Ip = 60 A
R
/dt
Thermal resistance
junction to mounting base
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
10ms
P
=60A (f=50Hz) at Tc=45˚C. Maximum number of cycles n=100k. Repetitive
CONDITIONS
pcb (FR4) mounted; footprint as in Fig.14
CONDITIONS
V
V
V
I
V
V
V
CONDITIONS
V
exponential waveform;
I
dI
V
I
dV
T
TM
TM
D
D
D
D
D
D
DM
D
G
= 23 A
cycle T=3 seconds minimum.
D
/dt = 5 A/μs
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 67% V
= 40 A; V
= 20 A; V
3 s (Minimum)
/dt = 50 V/μs; R
= 67% V
DRM(max)
DRM(max)
T
GT
GT
T
DRM(max)
D
R
DRM(max)
= 0.1 A
= 0.1 A
; I
; V
= 0.1 A
= 0.1 A
= V
= 25 V; dI
T
R
2
= 0.1 A; T
= V
DRM(max)
; T
; T
GK
RRM(max)
j
= 125 ˚C;
= 100 Ω
j
= 125 ˚C;
Gate open circuit
TM
; I
/dt = 30 A/μs;
G
j
= 125 ˚C
; T
R
= 0.1 A;
GK
j
= 125 ˚C
= 100 Ω
MIN.
MIN.
MIN.
0.25
200
50
-
-
-
-
-
-
-
-
-
-
BTH151S-650R
TYP.
TYP.
TYP.
1000
Product specification
130
1.4
0.6
0.4
0.1
75
10
70
2
7
2
-
MAX.
MAX.
MAX.
1.75
1.8
1.5
0.5
15
40
20
-
-
-
-
-
-
Rev 1.001
UNIT
UNIT
UNIT
V/μs
V/μs
K/W
K/W
mA
mA
mA
mA
μs
μs
V
V
V