BYC8X-600 NXP Semiconductors, BYC8X-600 Datasheet - Page 4

• Manufacturer Part Number: BYC8X-600
• Description: Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Isolation characteristics
Table 6.
7. Characteristics
Table 7.
BYC8X-600_2
Product data sheet
Symbol
V
C
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
I
V
R
rr
RM
isol(RMS)
F
FR
isol
r
Isolation characteristics
Characteristics
Parameter
RMS isolation voltage
isolation capacitance
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery
voltage
Conditions
f = 1 MHz; RH = 65 %; between all pins
and external heatsink
from cathode to external heatsink
Conditions
I
I
I
V
V
I
I
T
I
T
I
T
I
T
I
T
I
see
F
F
F
F
F
F
F
F
F
F
j
j
j
j
j
R
R
= 8 A; T
= 8 A; T
= 16 A; T
= 1 A; dI
= 8 A; V
= 1 A; V
= 8 A; V
= 10 A; V
= 8 A; V
= 10 A; dI
= 100 °C
= 25 °C
= 25 °C; see
= 100 °C
= 125 °C
= 500 V; T
= 600 V
Figure 6
j
j
R
R
R
R
F
= 150 °C; see
= 25 °C
j
R
/dt = 100 A/µs
F
Rev. 02 — 13 March 2009
= 400 V; dI
= 30 V; dI
= 400 V; dI
= 400 V; dI
= 150 °C
/dt = 100 A/µs; T
= 400 V; dI
j
= 100 °C
Figure 5
F
/dt = 50 A/µs;
F
F
F
/dt = 500 A/µs;
/dt = 500 A/µs;
/dt = 50 A/µs;
F
/dt = 500 A/µs;
Figure 4
j
= 25 °C;
Hyperfast rectifier diode, low switching loss
Min
-
-
Min
-
-
-
-
-
-
-
-
-
-
-
-
BYC8X-600
10
Typ
-
Typ
1.4
2
1.7
1.1
9
12
32
30
19
9.5
1.5
8
© NXP B.V. 2009. All rights reserved.
Max
2500
-
Max
1.85
2.9
2.3
3
150
-
40
52
-
12
5.5
10
Unit
V
pF
Unit
V
V
V
mA
µA
nC
ns
ns
ns
A
A
V
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