BYV79E-200 NXP Semiconductors, BYV79E-200 Datasheet - Page 5

• Manufacturer Part Number: BYV79E-200
• Description: Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package
• Manufacturer: NXP Semiconductors

1;3 Semiconductors
July 1998
Rectifier diodes
ultrafast, rugged
Fig.9. Typical and maximum forward characteristic
1000
0.01
60
50
40
30
20
10
100
0.1
0
10
10
1
1
0
1
IF / A
1
trr / ns
Irrm / A
Tj = 150 C
Tj = 25 C
Fig.8. Maximum I
Fig.7. Maximum t
I
F
0.5
= f(V
typ
F
); parameter T
-dIF/dt (A/us)
dIF/dt (A/us)
IF=1A
VF / V
10
1.0
10
rrm
rr
at T
IF=10A
IF=10A
at T
max
j
j
= 25 ˚C.
= 25 ˚C.
1.5
j
IF=2A
100
100
2
4
Fig.11. Transient thermal impedance; Z
0.001
1000
0.01
100
1.0
0.1
10
10
1
1us
1.0
Qs / nC
Transient thermal impedance, Zth j-mb (K/W)
Fig.10. Maximum Q
10us
100us
pulse width, tp (s)
-dIF/dt (A/us)
1ms
IF=10A
10
P
5A
2A
D
10ms 100ms
s
at T
t
BYV79E series
Product specification
p
T
j
= 25 ˚C.
D =
BYV79E
t
T
p
t
1s
th j-mb
Rev 1.200
100
= f(t
10s
p
).