PMEG2010EH_EJ_ET NXP Semiconductors, PMEG2010EH_EJ_ET Datasheet

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PMEG2010EH_EJ_ET

Manufacturer Part Number
PMEG2010EH_EJ_ET
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with anintegrated guard ring for stress protection, encapsulated in small Surface-MountedDevice (SMD) plastic packages
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection, encapsulated in small Surface-Mounted
Device (SMD) plastic packages.
Table 1.
I
I
I
I
I
I
I
I
I
Table 2.
[1]
Type number
PMEG2010EH
PMEG2010EJ
PMEG2010ET
Symbol
I
V
V
F
R
F
PMEG2010EH; PMEG2010EJ;
PMEG2010ET
1 A very low V
Rev. 04 — 20 March 2007
Forward current: I
Reverse voltage: V
Very low forward voltage
Small SMD plastic packages
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
Pulse test: t
Product overview
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
p
300 s;
Package
NXP
SOD123F
SOD323F
SOT23
F
R
F
1 A
MEGA Schottky barrier rectifiers
0.02.
20 V
JEITA
-
SC-90
-
Conditions
T
I
F
sp
= 1000 mA
55 C
JEDEC
-
-
TO-236AB
[1]
Min
-
-
-
Typ
-
-
420
Product data sheet
Configuration
single
single
single
Max
1
20
500
Unit
A
V
mV

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PMEG2010EH_EJ_ET Summary of contents

Page 1

PMEG2010EH; PMEG2010EJ; PMEG2010ET 1 A very low V Rev. 04 — 20 March 2007 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in small ...

Page 2

... Type number PMEG2010EH PMEG2010EJ PMEG2010ET 4. Marking Table 5. Type number PMEG2010EH PMEG2010EJ PMEG2010ET [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PMEG2010EH_EJ_ET_4 Product data sheet 1 A very low V Pinning Description cathode anode anode n.c. cathode Ordering information Package Name Description - plastic surface-mounted package; 2 leads SC-90 plastic surface-mounted package ...

Page 3

... T stg [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm PMEG2010EH_EJ_ET_4 Product data sheet 1 A very low V Limiting values Parameter Conditions reverse voltage forward current ...

Page 4

... Table unless otherwise specified. amb Symbol [1] Pulse test: t PMEG2010EH_EJ_ET_4 Product data sheet 1 A very low V Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient PMEG2010EH PMEG2010EJ PMEG2010ET thermal resistance from junction to solder point ...

Page 5

... C amb ( amb ( amb Fig 1. Forward current as a function of forward voltage; typical values MHz amb Fig 3. Diode capacitance as a function of reverse voltage; typical values PMEG2010EH_EJ_ET_4 Product data sheet 1 A very low V 006aaa247 (5) 0.3 0.4 0.5 V (V) F ...

Page 6

... NXP Semiconductors 8. Test information Fig 4. Duty cycle definition 9. Package outline 1.7 1.5 1 3.6 2.7 3.4 2.5 2 0.70 0.55 Dimensions in mm Fig 5. Package outline SOD123F Fig 7. Package outline SOT23 (TO-236AB) PMEG2010EH_EJ_ET_4 Product data sheet 1 A very low 1.2 1.0 0.55 0.35 0.25 0.10 04-11-29 Dimensions in mm Fig 6. Package outline SOD323F (SC-90) 3.0 2.8 3 2.5 1.4 2.1 1 1.9 Dimensions in mm Rev. 04 — 20 March 2007 PMEG2010EH/EJ/ET MEGA Schottky barrier rectifi ...

Page 7

... PMEG2010EJ PMEG2010ET [1] For further information and the availability of packing methods, see 11. Soldering Fig 8. Reflow soldering footprint SOD123F Fig 9. Reflow soldering footprint SOD323F (SC-90) PMEG2010EH_EJ_ET_4 Product data sheet 1 A very low V Packing methods Package Description SOD123F 4 mm pitch tape and reel ...

Page 8

... NXP Semiconductors Fig 10. Reflow soldering footprint SOT23 (TO-236AB) 4.60 Fig 11. Wave soldering footprint SOT23 (TO-236AB) PMEG2010EH_EJ_ET_4 Product data sheet 1 A very low V 2.90 2.50 0.85 2 3.00 1.30 0.85 3 0.50 (3x) 0.60 (3x) 1.00 3.30 3.40 1.20 (2x 4.00 1.20 3 2.80 4.50 Rev. 04 — 20 March 2007 PMEG2010EH/EJ/ET MEGA Schottky barrier rectifiers F 1 solder lands 2.70 solder resist ...

Page 9

... PMEGXX10EH_EJ_SER_3 20050411 PMEGXX10EJ_SER_2 20050131 PMEGXX10EJ_SER_1 20040907 PMEG2010EH_EJ_ET_4 Product data sheet 1 A very low V Data sheet status Product data sheet The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. ...

Page 10

... Contact information For additional information, please visit: For sales office addresses, send an email to: PMEG2010EH_EJ_ET_4 Product data sheet 1 A very low V [3] Definition This document contains data from the objective specification for product development. ...

Page 11

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PMEG2010EH_EJ_ET_4 All rights reserved. Date of release: 20 March 2007 ...

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