BUK7215-55A NXP Semiconductors, BUK7215-55A Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7215-55A

Manufacturer Part Number
BUK7215-55A
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BUK7215-55A
Manufacturer:
NXP
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BUK7215-55A
Manufacturer:
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK7215-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 27 January 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V and 24 V loads
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source voltage
drain current
total power
dissipation
drain-source on-state
resistance
Conditions
T
V
see
T
V
T
see
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure
Figure 12
= 25 °C; see
= 10 V; T
= 10 V; I
3; see
j
D
≤ 175 °C
mb
= 25 A;
Figure
= 25 °C;
Figure 2
Figure 1
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
11;
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
13
Max Unit
55
62
115
15
V
A
W
mΩ

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BUK7215-55A Summary of contents

Page 1

... BUK7215-55A N-channel TrenchMOS standard level FET Rev. 02 — 27 January 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... see Figure 13 Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 27 January 2011 BUK7215-55A N-channel TrenchMOS standard level FET Min ≤ sup = ° ...

Page 3

... j(init) 03nf79 120 P der (%) 150 175 200 T (°C) mb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 02 — 27 January 2011 BUK7215-55A N-channel TrenchMOS standard level FET Min - - -20 [ see Figure 1 - [1] Figure 3; - [2] - ≤ 10 µ -55 ...

Page 4

... DSon δ All information provided in this document is subject to legal disclaimers. Rev. 02 — 27 January 2011 BUK7215-55A N-channel TrenchMOS standard level FET 03nf78 = 10 μ 100 μ 100 (V) DS © NXP B.V. 2011. All rights reserved. ...

Page 5

... BUK7215-55A Product data sheet Conditions see Figure 4 minimum footprint ; FR4 printed circuit board −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 27 January 2011 BUK7215-55A N-channel TrenchMOS standard level FET Min Typ - - - 71.4 03nf77 t p δ ...

Page 6

... ° see Figure /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 02 — 27 January 2011 BUK7215-55A Min Typ Max = 25 ° -55 ° 4.4 ...

Page 7

... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 27 January 2011 BUK7215-55A N-channel TrenchMOS standard level FET 16 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values (S) ...

Page 8

... GS Fig 10. Gate-source threshold voltage as a function of 03na37 150 200 ID (A) Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 27 January 2011 BUK7215-55A N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 −60 ...

Page 9

... 175 ° ° 0.0 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 02 — 27 January 2011 BUK7215-55A N-channel TrenchMOS standard level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03na32 1.5 V ...

Page 10

... min min 5.46 0.56 6.22 6.73 4.0 4.45 5.00 0.20 5.98 6.47 REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 27 January 2011 BUK7215-55A N-channel TrenchMOS standard level FET min 10.4 2.95 2.285 4.57 0.5 9.6 2.55 EUROPEAN PROJECTION SOT428 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK7215-55A v.2 20110127 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 27 January 2011 BUK7215-55A N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 27 January 2011 BUK7215-55A N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 27 January 2011 Document identifier: BUK7215-55A ...

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