BUK7509-55A NXP Semiconductors, BUK7509-55A Datasheet - Page 8

• Manufacturer Part Number: BUK7509-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7509-55A
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
V
DD
20
= 14 V
40
V
DD
(A)
I
S
100
75
50
25
= 44 V
60
0
0.0
All information provided in this document is subject to legal disclaimers.
Q
G
(nC)
03nj13
Rev. 02 — 2 February 2011
80
0.3
T
j
= 175 °C
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
5000
3750
2500
1250
C
0.9
0
10
as a function of drain-source voltage; typical
values
T
−2
j
V
N-channel TrenchMOS standard level FET
= 25 °C
SD
03nj12
(V)
C
C
C
rss
iss
oss
1.2
10
−1
BUK7509-55A
1
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nj19
(V)
10
2
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