BUK7511-55B NXP Semiconductors, BUK7511-55B Datasheet - Page 4

• Manufacturer Part Number: BUK7511-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
BUK7511-55B
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
100
75
50
25
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
(A)
I
D
10
10
10
Capped at 75 A due to package
1
3
2
1
Capped at 75 A due to package
100
Limit R
DSon
150
= V
T
All information provided in this document is subject to legal disclaimers.
mb
DS
/I
03nn46
(°C)
D
200
Rev. 3 — 31 January 2011
10
DC
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
V
DS
(V)
50
t
100 μ s
1 ms
10 ms
100 ms
p
= 10 μ s
BUK7511-55B
100
03nn44
10
2
150
© NXP B.V. 2011. All rights reserved.
T
mb
03na19
(°C)
200
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