BUK7608-40B NXP Semiconductors, BUK7608-40B Datasheet - Page 2

• Manufacturer Part Number: BUK7608-40B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK7608-40B_4
Product data sheet
Pin
1
2
3
mb
Type number
BUK7608-40B
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
DGR
GS
tot
Symbol
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
Package
Name
D2PAK
Description
gate
drain
source
mounting base; connected to
drain
[1]
It is not possible to make a connection to pin 2.
Description
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
Conditions
T
R
T
3;
T
T
3;
T
T
T
T
t
p
j
mb
mb
mb
mb
mb
mb
mb
GS
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 25 °C; V
= 100 °C; V
= 25 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C;
= 25 °C;
= 20 kΩ
Rev. 04 — 24 September 2008
j
≤ 175 °C
p
GS
GS
≤ 10 µs; pulsed; see
GS
Figure 2
[1]
= 10 V; see
= 10 V; see
= 10 V; see
mb
= 25 °C
Simplified outline
Figure
Figure
Figure
(D2PAK)
SOT404
1
Figure 3
N-channel TrenchMOS standard level FET
1; see
1; see
mb
1;
2
3
Figure
Figure
[1]
[1]
[2]
[1]
[2]
BUK7608-40B
Graphic symbol
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
G
mbb076
© NXP B.V. 2008. All rights reserved.
Max
40
40
20
101
71
75
407
157
175
175
101
75
407
D
Version
SOT404
S
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
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