BUK7608-40B NXP Semiconductors, BUK7608-40B Datasheet - Page 8

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7608-40B

Manufacturer Part Number
BUK7608-40B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK7608-40B
Manufacturer:
NXP
Quantity:
51 000
Part Number:
BUK7608-40B
Manufacturer:
NXP
Quantity:
12 500
NXP Semiconductors
BUK7608-40B_4
Product data sheet
Fig 13. Reverse diode current as a function of reverse
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
(A)
I
S
100
75
50
25
0
0.0
diode voltage; typical values
0.3
T
j
= 175 °C
0.6
(pF)
3000
2000
1000
C
0.9
0
10
25 °C
−2
V
003aac071
SD
(V)
Rev. 04 — 24 September 2008
1.2
10
−1
1
Fig 14. Gate-source voltage as a function of turn-on
C
C
C
oss
rss
iss
V
(V)
GS
10
8
6
4
2
0
10
gate charge; typical values
0
V
N-channel TrenchMOS standard level FET
003aac078
DS
(V)
10
10
2
V
DD
BUK7608-40B
20
= 14 V
V
DD
30
© NXP B.V. 2008. All rights reserved.
= 32 V
Q
003aac072
G
(nC)
40
8 of 12

Related parts for BUK7608-40B