BUK7608-40B NXP Semiconductors, BUK7608-40B Datasheet - Page 7

• Manufacturer Part Number: BUK7608-40B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7608-40B_4
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
V
R
(mΩ)
GS(th)
DSon
(V)
14
12
10
5
4
3
2
1
0
8
6
4
−60
junction temperature
of gate-source voltage; typical values
Gate-source threshold voltage as a function of
5
0
10
60
max
min
typ
15
120
V
GS
003aab852
T
003aac075
j
(V)
(°C)
Rev. 04 — 24 September 2008
160
20
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
a
D
1.5
0.5
−1
−2
−3
−4
−5
−6
2
1
0
−60
gate-source voltage
factor as a function of junction temperature
0
N-channel TrenchMOS standard level FET
0
2
min
BUK7608-40B
60
typ
4
120
max
V
© NXP B.V. 2008. All rights reserved.
GS
003aab853
003aab851
T
j
(V)
(°C)
180
6
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