BUK7610-55AL NXP Semiconductors, BUK7610-55AL Datasheet
BUK7610-55AL
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BUK7610-55AL Summary of contents
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... BUK7610-55AL N-channel TrenchMOS standard level FET Rev. 02 — 9 January 2008 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...
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... j(init) inductive load see Figure ° ° ≤ 10 μs; pulsed ° Rev. 02 — 9 January 2008 BUK7610-55AL N-channel TrenchMOS standard level FET Graphic symbol mbb076 2 3 Min Max - -20 20 [1][2] and ...
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... Fig 2. Normalized total power dissipation as a function of mounting base temperature (A) ( Rev. 02 — 9 January 2008 BUK7610-55AL N-channel TrenchMOS standard level FET 03aa16 50 100 150 ( ° tot = × 100 % P tot ( 25°C ) 003aaa739 ˚C j 150 ˚C 10 (ms) © ...
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... BUK7610-55AL_2 Product data sheet DC 10 Conditions mounted on a printed-circuit board; minimum footprint; vertical in still air see Figure 5 Rev. 02 — 9 January 2008 BUK7610-55AL N-channel TrenchMOS standard level FET 003aaa737 = 10 μ 100 μ 100 ms V (V) DS ...
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... 175 °C; see T Figure 12 and ° see Figure 12 and 13 Rev. 02 — 9 January 2008 BUK7610-55AL N-channel TrenchMOS standard level FET 003aaa734 t p δ (s) p Min Typ Max ...
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... Ω G(ext ° from upper edge of drain mounting base to center of die ° from source lead to source bond = 25 °C pad Rev. 02 — 9 January 2008 BUK7610-55AL N-channel TrenchMOS standard level FET Min Typ Max - 0.85 1 430 - - 124 - - ...
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... I D (A) 100 ( Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values Rev. 02 — 9 January 2008 BUK7610-55AL 003aaa731 ( 100 200 300 400 I (A) D 003aaa733 = 175 ° ° C ...
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... Fig 11. Sub-threshold drain current as a function of gate-source voltage 003aaa730 2 a 1.5 1 0 Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 02 — 9 January 2008 BUK7610-55AL N-channel TrenchMOS standard level FET 03aa35 min typ max ( ° 03ne89 0 60 120 ( ° ...
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... Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 150 I S (A) 100 = 25 ° 175 ° 0.0 0.3 0.6 0.9 Rev. 02 — 9 January 2008 BUK7610-55AL N-channel TrenchMOS standard level FET 003aaa738 C iss C oss C rss - ( 003aaa736 1.2 V (V) SD © ...
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... 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 9 January 2008 BUK7610-55AL N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2008. All rights reserved. SOT404 ...
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... Typical thermal resistance (j-mb) figure added in BUK75_7610_55AL_1 20041022 BUK7610-55AL_2 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Table Product data sheet - Rev. 02 — 9 January 2008 BUK7610-55AL Supersedes BUK75_7610_55AL_1 5. - © NXP B.V. 2008. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 9 January 2008 BUK7610-55AL N-channel TrenchMOS standard level FET © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK7610-55AL_2 All rights reserved. Date of release: 9 January 2008 ...