BUK7613-75B NXP Semiconductors, BUK7613-75B Datasheet
![Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/50/415039/sot404_3d_sml.gif)
BUK7613-75B
Available stocks
Related parts for BUK7613-75B
BUK7613-75B Summary of contents
Page 1
... BUK7613-75B N-channel TrenchMOS standard level FET Rev. 3 — 27 December 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
Page 2
... Figure °C mb ≤ 10 µs; T pulsed ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 3 — 27 December 2011 BUK7613-75B Graphic symbol G mbb076 3 Min - - -20 Figure 1 - Figure 1; - ≤ 10 µ -55 - ° ...
Page 3
... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 All information provided in this document is subject to legal disclaimers. Rev. 3 — 27 December 2011 BUK7613-75B N-channel TrenchMOS standard level FET 50 100 150 T mb 003aag934 =10 μ 100 μ ...
Page 4
... BUK7613-75B Product data sheet Conditions see Figure 4 mounted on a printed-circuit board ; minimum footprint −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 3 — 27 December 2011 BUK7613-75B N-channel TrenchMOS standard level FET Min Typ - - - 50 03nm82 t p δ ...
Page 5
... A/µ - /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 3 — 27 December 2011 BUK7613-75B Min Typ Max = 25 ° -55 ° 4.4 - ...
Page 6
... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 3 — 27 December 2011 BUK7613-75B N-channel TrenchMOS standard level FET 30 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values 40 g ...
Page 7
... Fig 10. Gate-source threshold voltage as a function of 03nm79 Label 120 180 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 3 — 27 December 2011 BUK7613-75B N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 2 ...
Page 8
... 175 ° ° 0.0 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 3 — 27 December 2011 BUK7613-75B N-channel TrenchMOS standard level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nm73 1 ...
Page 9
... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 3 — 27 December 2011 BUK7613-75B N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2011. All rights reserved. SOT404 05-02-11 06-03- ...
Page 10
... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK7613-75B v.3 20111227 • Modifications: Various changes to content. BUK7613-75B v.2 20101117 BUK7613-75B Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. ...
Page 11
... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 3 — 27 December 2011 BUK7613-75B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...
Page 12
... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 27 December 2011 BUK7613-75B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...
Page 13
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 27 December 2011 Document identifier: BUK7613-75B ...