BUK7628-55A NXP Semiconductors, BUK7628-55A Datasheet - Page 4

• Manufacturer Part Number: BUK7628-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
June 2000
TrenchMOS
Standard level FET
100
70
65
60
55
50
45
40
35
30
25
20
55
50
45
40
35
30
25
20
15
10
Fig.5. Typical output characteristics, T
90
80
70
60
50
40
30
20
10
Fig.6. Typical on-state resistance, T
Fig.7. Typical on-state resistance, T
0
0
6
RDS(ON) / mOhm
RDS(ON) / mOhm
0
ID / A
VGS / V =
18.0
16.0
12.0
11.5
R
10
DS(ON)
8
R
I
DS(ON)
2
20
D
= f(V
6.0
= f(V
10
30
= f(I
transistor
GS
DS
10.5
10.0
11.0
6.5
); conditions I
); parameter V
4
D
12
40
); parameter V
VGS / V
VDS / V
ID / A
7.0
50
14
6
VGS / V =
60
D
8.0
16
GS
= 25 A;
GS
70
j
j
8
j
= 25 ˚C.
= 25 ˚C.
= 25 ˚C.
18
9.0
5.0
80
10.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
4.5
10
90
20
4
Fig.10. Normalised drain-source on-state resistance.
16
14
12
10
100
I
a = R
90
80
70
60
50
40
30
20
10
8
6
4
2
0
D
0
2.5
1.5
0.5
Fig.9. Typical transconductance, T
0
= f(V
gfs / S
-100
0
2
1
ID / A
Rds(on) normlised to 25degC
Fig.8. Typical transfer characteristics.
DS(ON)
GS
10
g
) ; conditions: V
fs
-50
2
/R
= f(I
Tj / ˚C =
DS(ON)25 ˚C
20
D
); conditions: V
0
4
30
Tmb / degC
= f(T
175
ID / A
25
VGS/V
50
40
DS
6
j
); I
= 25 V; parameter T
D
50
100
= 25 A; V
DS
Product specification
BUK7528-55A
BUK7628-55A
8
= 25 V
60
150
j
= 25 ˚C.
10
GS
70
Rev 1.100
= 5 V
200
12
80
j