BUK763R4-30B NXP Semiconductors, BUK763R4-30B Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK763R4-30B

Manufacturer Part Number
BUK763R4-30B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BUK763R4-30B.pdf (14 pages)

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Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUK763R4-30B
Manufacturer:
NXP
Quantity:
60 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUK763R4-30B
Manufacturer:
NXP
Quantity:
12 500
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
[1]
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
BUK763R4-30B
N-channel TrenchMOS standard level FET
Rev. 2 — 21 April 2011
AEC Q101 compliant
Suitable for standard level gate drive
sources
12 V loads
Automotive systems
Continuous current is limited by package.
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source
avalanche energy
Conditions
T
V
see
T
V
T
see
I
R
T
D
j
mb
j
j(init)
GS
GS
GS
≥ 25 °C; T
= 25 °C;
= 75 A; V
Figure
= 25 °C; see
Figure
= 10 V; T
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
1; see
12; see
sup
j
D
≤ 175 °C
mb
GS
= 25 A;
≤ 30 V;
= 25 °C;
= 10 V;
Figure 2
Figure 4
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
Figure 13
[1]
Product data sheet
Min Typ
-
-
-
-
-
-
-
-
2.9
-
Max Unit
30
75
255
3.4
1.3
V
A
W
mΩ
J

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BUK763R4-30B Summary of contents

Page 1

... BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 2 — 21 April 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK763R4-30B Graphic symbol mbb076 Version SOT404 © NXP B.V. 2011. All rights reserved ...

Page 3

... T pulsed ° ≤ sup °C; unclamped GS j(init) see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK763R4-30B Min Max - - [1] Figure [2][3] Figure 1; - ...

Page 4

... I AL ( All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK763R4-30B N-channel TrenchMOS standard level FET 100 150 Normalized total power dissipation as a function of mounting base temperature 003aab195 (1) ( (ms) AL © ...

Page 5

... DC 1 Conditions mounted on a printed-circuit board; minimum footprint; vertical in still air - All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK763R4-30B N-channel TrenchMOS standard level FET 003aab185 = 10 μ 100 μ 100 (V) ...

Page 6

... ° see Figure /dt = -100 A/µ All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK763R4-30B Min Typ Max 4 0.05 10 ...

Page 7

... V ( (V) DS Fig 7. 003aab190 75 100 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK763R4-30B N-channel TrenchMOS standard level FET 20 R label is V (V) DSon GS (mΩ) 6.5 5 100 ...

Page 8

... V (V) GS Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK763R4-30B N-channel TrenchMOS standard level FET min typ max ( 120 T j © NXP B.V. 2011. All rights reserved. ...

Page 9

... 175 ° ° 0.0 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK763R4-30B N-channel TrenchMOS standard level FET C iss C oss C rss function of drain-source voltage; typical values. 003aab194 1.5 V ...

Page 10

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK763R4-30B N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2011. All rights reserved. SOT404 05-02-11 06-03- ...

Page 11

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK763R4-30B separated from data sheet BUK75_763R4-30B_1. BUK75_763R4-30B_1 20060105 BUK763R4-30B Product data sheet ...

Page 12

... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK763R4-30B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK763R4-30B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 21 April 2011 Document identifier: BUK763R4-30B ...

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