BUK763R6-40C NXP Semiconductors, BUK763R6-40C Datasheet

Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology

BUK763R6-40C

Manufacturer Part Number
BUK763R6-40C
Description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
AEC Q101 compliant
Avalanche robust
12V Motor, lamp and solenoid loads
High performance automotive power
systems
High performance Pulse Width
Modulation (PWM) applications
BUK763R6-40C
N-channel TrenchMOS standard level FET
Rev. 04 — 16 June 2010
Suitable for standard level gate drive
Suitable for thermally demanding
environment up to 175°C rating
Product data sheet

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BUK763R6-40C Summary of contents

Page 1

... BUK763R6-40C N-channel TrenchMOS standard level FET Rev. 04 — 16 June 2010 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications ...

Page 2

... Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C N-channel TrenchMOS standard level FET Min ≤ 175 ° [ ° Figure 3 ...

Page 3

... ° ≤ Ω 100 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C Min Typ Max - - [ 167 [3] - ...

Page 4

... Fig 2. Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C N-channel TrenchMOS standard level FET 0 50 100 150 T Normalized total power dissipation as a function of mounting base temperature 003aac911 = 10 μ 100 μs ...

Page 5

... BUK763R6-40C Product data sheet N-channel TrenchMOS standard level FET Conditions see Figure 4 mounted on printed circuit board; minimum footprint; SOT404 package - All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C Min Typ Max - - 0. 003aac590 δ = ...

Page 6

... ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C Min Typ Max Unit ...

Page 7

... I ( Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C N-channel TrenchMOS standard level FET 150 I D (A) 120 175 ° ° Transfer characteristics: drain current as a function of gate-source voltage ...

Page 8

... Fig 12. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C N-channel TrenchMOS standard level FET max typ min 0 60 120 T 4.8 5 5.5 5 ...

Page 9

... Fig 14. Gate-source voltage as a function of gate 003aac585 C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C N-channel TrenchMOS standard level FET ° 14V DS 6 ...

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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2010. All rights reserved. SOT404 05-02-11 06-03- ...

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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK763R6-40C v.4 20100616 • Modifications: Various changes to content. BUK763R6-40C v.3 20100602 BUK763R6-40C Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 June 2010 Document identifier: BUK763R6-40C ...

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