BUK763R6-40C NXP Semiconductors, BUK763R6-40C Datasheet
![Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology](/photos/41/50/415039/sot404_3d_sml.gif)
BUK763R6-40C
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BUK763R6-40C Summary of contents
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... BUK763R6-40C N-channel TrenchMOS standard level FET Rev. 04 — 16 June 2010 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications ...
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... Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C N-channel TrenchMOS standard level FET Min ≤ 175 ° [ ° Figure 3 ...
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... ° ≤ Ω 100 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C Min Typ Max - - [ 167 [3] - ...
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... Fig 2. Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C N-channel TrenchMOS standard level FET 0 50 100 150 T Normalized total power dissipation as a function of mounting base temperature 003aac911 = 10 μ 100 μs ...
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... BUK763R6-40C Product data sheet N-channel TrenchMOS standard level FET Conditions see Figure 4 mounted on printed circuit board; minimum footprint; SOT404 package - All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C Min Typ Max - - 0. 003aac590 δ = ...
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... ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C Min Typ Max Unit ...
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... I ( Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C N-channel TrenchMOS standard level FET 150 I D (A) 120 175 ° ° Transfer characteristics: drain current as a function of gate-source voltage ...
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... Fig 12. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C N-channel TrenchMOS standard level FET max typ min 0 60 120 T 4.8 5 5.5 5 ...
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... Fig 14. Gate-source voltage as a function of gate 003aac585 C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C N-channel TrenchMOS standard level FET ° 14V DS 6 ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2010. All rights reserved. SOT404 05-02-11 06-03- ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK763R6-40C v.4 20100616 • Modifications: Various changes to content. BUK763R6-40C v.3 20100602 BUK763R6-40C Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. ...
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... All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 16 June 2010 BUK763R6-40C N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 June 2010 Document identifier: BUK763R6-40C ...