BUK764R0-75C NXP Semiconductors, BUK764R0-75C Datasheet

Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology

BUK764R0-75C

Manufacturer Part Number
BUK764R0-75C
Description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
Table 1.
Symbol
V
I
P
D
DS
tot
BUK764R0-75C
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011
AEC-Q101 compliant
Avalanche robust
12 V Motor, lamp and solenoid loads
High performance automotive power
systems
Quick reference data
Parameter
drain-source voltage T
drain current
total power
dissipation
Conditions
V
see
T
j
mb
GS
≥ 25 °C; T
Figure
= 25 °C; see
= 10 V; T
1; see
j
≤ 175 °C
mb
= 25 °C;
Figure 2
Figure 4
Suitable for standard level gate drive
Suitable for thermally demanding
environment due to 175 °C rating
High performance Pulse Width
Modulation (PWM) applications
[1][2]
-
Min
-
-
Product data sheet
Typ
-
-
-
75
Max
100
333
Unit
V
A
W

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BUK764R0-75C Summary of contents

Page 1

... BUK764R0-75C N-channel TrenchMOS standard level FET Rev. 2 — 26 April 2011 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications ...

Page 2

... Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK764R0-75C N-channel TrenchMOS standard level FET Min Typ = 3.4 D Figure ≤ ...

Page 3

... T pulsed ° ≤ 100 sup °C; unclamped GS j(init) see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK764R0-75C Min Max - -20 20 [1][2] Figure 1; - 100 [1][3] - 199 [1][2] Figure 1 - 100 ...

Page 4

... All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK764R0-75C N-channel TrenchMOS standard level FET 100 150 Normalized total power dissipation as a function of mounting base temperature 003aab385 (ms) AL © NXP B.V. 2011. All rights reserved. ...

Page 5

... Mounted on a printed-circuit board; vertical in still air. BUK764R0-75C Product data sheet Limit DSon DS D (1) 1 Conditions minimum footprint All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK764R0-75C N-channel TrenchMOS standard level FET 100 μ 100 (V) DS Min Typ - - ...

Page 6

... ° see Figure /dt = -100 A/µ All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK764R0-75C Min Typ Max 4.4 - 0.02 1 ...

Page 7

... Fig 6. 003aab386 2.4 a 1.8 1.2 0 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK764R0-75C N-channel TrenchMOS standard level FET −1 min typ max −2 −3 −4 −5 − Sub-threshold drain current as a function of gate-source voltage 0 − ...

Page 8

... ° 0.5 1 All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK764R0-75C N-channel TrenchMOS standard level FET C iss C oss C rss function of drain-source voltage; typical values 003aab384 1 ...

Page 9

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK764R0-75C N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2011. All rights reserved. SOT404 05-02-11 06-03- ...

Page 10

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK764R0-75C v.2 20110426 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 11

... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK764R0-75C N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK764R0-75C N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 26 April 2011 Document identifier: BUK764R0-75C ...

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