BUK7675-100A NXP Semiconductors, BUK7675-100A Datasheet - Page 9

• Manufacturer Part Number: BUK7675-100A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7675-100A_2
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
a
3
2
1
0
-60
factor as a function of junction temperature
0
60
(pF)
C
2000
1800
1600
1400
1200
1000
800
600
400
200
120
0
10
−2
C
C
C
03aa29
T
oss
rss
iss
j
( ° C)
180
10
Rev. 02 — 31 July 2009
−1
1
Fig 14. Reverse diode current as a function of reverse
(A)
I
S
45
40
35
30
25
20
15
10
5
0
10
0.0
diode voltage; typical values
N-channel TrenchMOS standard level FET
V
DS
03nb33
(V)
0.2
10
2
T
j
0.4
= 175 °C
BUK7675-100A
0.6
0.8
T
© NXP B.V. 2009. All rights reserved.
j
= 25 °C
1.0
V
SD
03nb26
(V)
1.2
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