BUK7E04-40A NXP Semiconductors, BUK7E04-40A Datasheet - Page 9

• Manufacturer Part Number: BUK7E04-40A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7E04-40A
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
10
8
6
4
2
0
gate charge; typical values
0
V
30
DD
= 14 V
60
(A)
I
S
200
150
100
V
50
DD
90
0
0
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= 32 V
Q
G
T
j
(nC)
03ne61
= 175 °C
120
Rev. 03 — 15 June 2010
0.5
Fig 14. Input, output and reverse transfer capacitances
(nF)
1.0
C
T
8
6
4
2
0
10
j
as a function of drain-source voltage; typical
values
= 25 °C
V
−1
SD
N-channel TrenchMOS standard level FET
(V)
03ne60
1.5
1
BUK7E04-40A
10
V
© NXP B.V. 2010. All rights reserved.
DS
C
C
C
(V)
iss
oss
rss
03ne67
10
2
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