BUK7Y12-55B NXP Semiconductors, BUK7Y12-55B Datasheet - Page 4

• Manufacturer Part Number: BUK7Y12-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7Y12-55B
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
100
75
50
25
0
mounting base temperature
Continuous drain current as a function of
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
0
50
100
(A)
I
AL
10
10
10
-1
150
2
1
10
-3
All information provided in this document is subject to legal disclaimers.
T
003aac507
mb
(°C)
200
10
Rev. 03 — 7 April 2010
-2
10
-1
Fig 2.
P
(%)
der
120
80
40
0
1
function of mounting base temperature
Normalized total power dissipation as a
0
t
N-channel TrenchMOS standard level FET
(1)
(2)
(3)
AL
003aac486
(ms)
10
50
BUK7Y12-55B
100
150
© NXP B.V. 2010. All rights reserved.
T
mb
03na19
(°C)
200
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