BUK9529-100B NXP Semiconductors, BUK9529-100B Datasheet - Page 8

• Manufacturer Part Number: BUK9529-100B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9529-100B
Product data sheet
Fig 13. Gate-source threshold voltage as a function of
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
5
4
3
2
1
0
junction temperature
0
10
V
DD
= 14 V
20
(A)
I
D
100
V
75
50
25
DD
30
0
0.0
= 80 V
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Q
G
03nm47
(nC)
Rev. 02 — 9 February 2011
40
T
j
= 175 ° C
0.5
Fig 14. Input, output and reverse transfer capacitances
T
(pF)
1.0
j
C
6000
4000
2000
= 25 ° C
0
10
as a function of drain-source voltage; typical
values
V
−2
SD
(V)
03nm46
N-channel TrenchMOS logic level FET
1.5
10
−1
C
C
C
iss
oss
rss
BUK9529-100B
1
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nm53
(V)
10
2
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