BUK9575-100A NXP Semiconductors, BUK9575-100A Datasheet
BUK9575-100A
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BUK9575-100A Summary of contents
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... BUK9575-100A N-channel TrenchMOS logic level FET Rev. 3 — 26 April 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 April 2011 BUK9575-100A N-channel TrenchMOS logic level FET Graphic symbol mbb076 Version SOT78A © NXP B.V. 2011. All rights reserved. ...
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... T (° Fig 2. Normalized continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 April 2011 BUK9575-100A N-channel TrenchMOS logic level FET Min - - - -55 - Ω 003aaf171 ...
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... All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 April 2011 BUK9575-100A N-channel TrenchMOS logic level FET prior to avalanche = 150 ° −3 −2 − unclamped inductive load Single-shot avalanche rating; avalanche ...
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... ° /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 April 2011 BUK9575-100A N-channel TrenchMOS logic level FET Min Typ Max 100 - - 0 1 2.3 ...
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... V (V) GS Fig 9. 003aaf179 (V) GS Fig 11. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 April 2011 BUK9575-100A N-channel TrenchMOS logic level FET 140 4 DS(on) (mΩ) 120 100 °C j Drain-source on-state resistance as a function of drain current ...
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... W DSS (%) = 25 ° 1.2 1.6 V (V) SDS Fig 17. Normalised drain-source avalanche energy as a All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 April 2011 BUK9575-100A N-channel TrenchMOS logic level FET −1 −2 − typical −4 −5 −6 0 0 °C; V ...
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... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 April 2011 BUK9575-100A N-channel TrenchMOS logic level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 EUROPEAN PROJECTION ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9575-100A separated from data sheet BUK9575_9675-100A_2. Product specification All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 April 2011 BUK9575-100A ...
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... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 April 2011 BUK9575-100A N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 April 2011 BUK9575-100A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 26 April 2011 Document identifier: BUK9575-100A ...