BUK9609-40B NXP Semiconductors, BUK9609-40B Datasheet - Page 7

• Manufacturer Part Number: BUK9609-40B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
BUK9609-40B
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
I
D
(A)
I
10
10
10
10
10
10
D
300
200
100
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
10
Characteristics
8
6
Parameter
source-drain voltage
reverse recovery time
recovered charge
2
min
1
4
…continued
5
4.8
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
2.4
typ
6
Label is V
2
max
V
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
GS
8
GS
GS
V
= 25 A; V
= 20 A; dI
DS
(V)
03nm62
Figure 15
03ng53
(V)
= -10 V; V
(V)
10
3
Rev. 02 — 7 June 2010
GS
S
/dt = -100 A/µs;
DS
= 0 V; T
= 30 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
DSon
(mΩ)
g
(S)
j
fs
= 25 °C
16
12
80
60
40
20
8
4
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
3
0
N-channel TrenchMOS logic level FET
20
7
BUK9609-40B
Min
-
-
-
11
40
Typ
0.85
57
47
V
© NXP B.V. 2010. All rights reserved.
I
GS
D
(A)
03nm61
03nm59
(V)
Max
1.2
-
-
60
15
Unit
V
ns
nC
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