BUK9609-55A NXP Semiconductors, BUK9609-55A Datasheet - Page 4

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK9609-55A

Manufacturer Part Number
BUK9609-55A
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BUK9609-55A
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Part Number:
BUK9609-55A
Manufacturer:
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Quantity:
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NXP Semiconductors
BUK9609-55A
Product data sheet
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
D
10
10
10
1
3
2
1
capped at 75 A due to package
Limit R
DSon
All information provided in this document is subject to legal disclaimers.
= V
DS
/I
D
Rev. 02 — 3 February 2011
10
DC
N-channel TrenchMOS logic level FET
V
DS
(V)
t
100 μs
1 ms
10 ms
100 ms
p
= 10 μs
BUK9609-55A
03nh25
10
2
© NXP B.V. 2011. All rights reserved.
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