BUK9623-75A NXP Semiconductors, BUK9623-75A Datasheet - Page 6

• Manufacturer Part Number: BUK9623-75A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9623-75A
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
10
I
10
10
10
10
10
200
180
160
140
120
100
D
80
60
40
20
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
V
GS
2
= 10(V)
1
min
4
8
typ
6
2
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
03aa36
V
DS
(V)
03nb16
(V)
Rev. 02 — 16 February 2011
7
6
5
4
3
2
10
3
Fig 6.
Fig 8.
(mOhm)
R
DSon
g
(S)
fs
35
30
25
20
15
10
60
50
40
30
20
10
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
2
0
N-channel TrenchMOS logic level FET
20
4
BUK9623-75A
40
6
60
8
© NXP B.V. 2011. All rights reserved.
V
I
GS
D
03nb15
03nb13
(A)
(V)
10
80
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