BUK9628-55A NXP Semiconductors, BUK9628-55A Datasheet - Page 9

• Manufacturer Part Number: BUK9628-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9628-55A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
a
2.4
1.8
1.2
0.6
0
−60
factor as a function of junction temperature
0
60
(A)
I
S
100
80
60
40
20
120
0
0
All information provided in this document is subject to legal disclaimers.
T
j
(°C)
0.2
03aa28
Rev. 02 — 17 February 2011
180
0.4
T
j
0.6
= 175 °C
0.8
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
1.0
T
3500
3000
2500
2000
1500
1000
j
500
= 25 °C
1.2
0
10
as a function of drain-source voltage; typical
values
−2
1.4
V
03na82
SD
C
C
C
N-channel TrenchMOS logic level FET
iss
oss
rss
(V)
1.6
10
−1
BUK9628-55A
1
10
© NXP B.V. 2011. All rights reserved.
V
DS
03na88
(V)
10
2
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