BUK9675-100A NXP Semiconductors, BUK9675-100A Datasheet - Page 6

• Manufacturer Part Number: BUK9675-100A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9675-100A
Product data sheet
Fig 6.
Fig 8.
Fig 10. Forward transconductance as a function of
R
(mΩ)
DS(on)
(A)
g
(S)
I
D
fs
60
40
20
75
70
65
60
55
50
40
30
20
10
0
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
drain current; typical values
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
V
0
3
0
j
j
DS
= 25 °C
= 25 °C; I
V
GS
> I
4
(V) = 10
D
2
x R
5
D
DSon
20
= 25 A
4
6
5
4
7
6
3.8
40
8
V
All information provided in this document is subject to legal disclaimers.
8
GS
003aaf174
003aaf176
003aaf179
V
9
DS
V
(V)
GS
3.6
3.4
3.2
2.8
2.6
2.4
2.2
(V)
3
(V)
10
10
60
Rev. 04 — 19 April 2011
Fig 7.
Fig 9.
Fig 11. Normalized drain-source on-state resistance
R
(mΩ)
DS(on)
(A)
I
a
D
140
120
100
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
25
20
15
10
5
0
−100
10
of drain current; typical values
function of gate-source voltage; typical values
factor as a function of junction temperature
T
Drain-source on-state resistance as a function
V
Transfer characteristics: drain current as a
0
j
DS
= 25 °C
> I
N-channel TrenchMOS logic level FET
D
x R
1
DSon
20
T
0
j
= 175 °C
BUK9675-100A
4
2
100
30
T
j
= 25 °C
4.2
3
T
© NXP B.V. 2011. All rights reserved.
mb
I
D
V
003aaf175
003aaf178
003aaf180
(A)
GS
(°C)
4.6
4.8
4.4
5
(V)
200
40
4
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