BUK9675-55A NXP Semiconductors, BUK9675-55A Datasheet - Page 8

• Manufacturer Part Number: BUK9675-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9675-55A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
a
2.4
1.8
1.2
0.6
0
−60
factor as a function of junction temperature
0
60
(A)
I
S
50
40
30
20
10
120
0
0
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T
j
(°C)
03aa28
180
Rev. 2 — 8 February 2011
0.5
T
j
= 175 °C
Fig 14. Input, output and reverse transfer capacitances
(pF)
1.0
1200
1000
C
800
600
400
200
0
as a function of drain-source voltage; typical
values
10
V
T
SD
j
−2
= 25 °C
(V)
03nd38
N-channel TrenchMOS logic level FET
C
C
C
1.5
10
rss
iss
oss
−1
BUK9675-55A
1
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nd45
(V)
10
2
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