BUK98150-55A NXP Semiconductors, BUK98150-55A Datasheet - Page 11

• Manufacturer Part Number: BUK98150-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Revision history
Table 6.
BUK98150-55A_4
Product data sheet
Document ID
BUK98150-55A_4
Modifications:
BUK98150-55A_3
Modifications:
BUK98150-55A_2
Modifications:
BUK98150-55A_1
Revision history
Release date
20070611
20061124
20020325
20001003
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Table
typing error.
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 5: changed Typ and Max C
to 64 pF respectively because of typing error.
Table 3: Gate-source voltage maximum increased from 10 V to 15 V
Table 4: R
Table 5: Switching speed measurements updated
Section 1.4 and Table 3: Total power dissipation, peak drain current, peak reverse drain
current, and non-repetitive avalanche energy values updated.
5: IDSS drain leakage current condition changed from T
th(j-sp)
maximum decreased from 20 K/W to 15 K/W
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Rev. 04 — 11 June 2007
oss
output capacitance values from 40 pF to 53 pF and 48 pF
Change notice
-
-
-
-
N-channel TrenchMOS logic level FET
BUK98150-55A
j
= 175 C to T
Supersedes
BUK98150-55A_3
BUK98150-55A_2
BUK98150-55A_1
-
© NXP B.V. 2007. All rights reserved.
j
= 150 C due to
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