BUK9E06-55B NXP Semiconductors, BUK9E06-55B Datasheet - Page 2

• Manufacturer Part Number: BUK9E06-55B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK9E06-55B_4
Product data sheet
Pin
1
2
3
mb
Type number
BUK9E06-55B
Symbol
G
D
S
D
Pinning information
Ordering information
Package
Name
I2PAK
Description
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Symbol Parameter
Static characteristics
R
DSon
Continuous current is limited by package.
drain-source
on-state resistance
Description
plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB
Quick reference
Rev. 04 — 22 July 2009
Conditions
V
T
see
V
T
see
j
j
GS
GS
= 25 °C;
= 25 °C;
Simplified outline
Figure
Figure
= 10 V; I
= 5 V; I
11; see
11; see
D
D
= 25 A;
SOT226
= 25 A;
(I2PAK)
1
mb
2
Figure 12
Figure 12
3
BUK9E06-55B
N-channel TrenchMOS FET
Graphic symbol
Min
-
-
Typ
4.8
5.1
G
mbb076
© NXP B.V. 2009. All rights reserved.
SOT226
Max
5.4
6
D
Version
S
Unit
mΩ
mΩ
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