BUK9Y53-100B NXP Semiconductors, BUK9Y53-100B Datasheet - Page 3

• Manufacturer Part Number: BUK9Y53-100B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9Y53-100B_1
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
P
(%)
(A)
der
I
10
D
120
10
10
80
40
10
0
1
3
2
1
function of mounting base temperature
T
P
0
1
mb
der
= 25 C; I
=
----------------------- -
P
Limit R
tot 25 C
50
P
tot
DM
DSon
is single pulse.
= V
100 %
100
DS
/ I
D
150
T
003aab844
mb
10
DC
( C)
200
Rev. 01 — 30 August 2007
Fig 2. Continuous drain current as a function of
(A)
I
D
30
20
10
0
V
mounting base temperature
0
GS
5 V
10
N-channel TrenchMOS logic level FET
2
t
100 s
1 ms
10 ms
100 ms
p
50
= 10 s
BUK9Y53-100B
100
V
DS
(V)
150
© NXP B.V. 2007. All rights reserved.
T
003aab225
mb
003aab226
( C)
200
10
3
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