PHP191NQ06LT NXP Semiconductors, PHP191NQ06LT Datasheet - Page 6

• Manufacturer Part Number: PHP191NQ06LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHP191NQ06LT_2
Product data sheet
Fig 5.
Fig 7.
V
(A)
I
GS(th)
(V)
240
D
160
80
2.5
1.5
0.5
0
2
1
0
-60
function of drain-source voltage; typical values
junction temperature
Output characteristics: drain current as a
Gate-source threshold voltage as a function of
0
T
j
= 25 °C
5 V
0.5
0
10 V
60
1
4 V
max
typ
min
3.6 V
120
1.5
V
GS
All information provided in this document is subject to legal disclaimers.
V
T
03aa33
DS
j
= 2.4 V
( ° C)
3.2 V
2.8 V
03ar02
(V)
Rev. 02 — 14 January 2010
180
2
Fig 6.
Fig 8.
(A)
10
I
10
10
10
10
10
(A)
I
D
D
80
60
40
20
-1
-2
-3
-4
-5
-6
0
function of gate-source voltage; typical values
gate-source voltage
Transfer characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
V
DS
N-channel TrenchMOS logic level FET
> I
D
x R
DSon
1
1
PHP191NQ06LT
min
T
j
= 175 °C
typ
2
2
max
© NXP B.V. 2010. All rights reserved.
V
25 °C
V
GS
GS
03aa36
(V)
(V)
03ar04
3
3
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