PSMN038-100K NXP Semiconductors, PSMN038-100K Datasheet - Page 5

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PSMN038-100K

Manufacturer Part Number
PSMN038-100K
Description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN038-100K
Manufacturer:
NXP
Quantity:
12 500
Part Number:
PSMN038-100K
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
NXP Semiconductors
6. Characteristics
Table 6.
PSMN038-100K_2
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
g
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
transfer conductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
I
T
V
T
V
R
V
I
see
I
V
D
D
D
D
D
S
S
j
j
DS
DS
GS
GS
GS
GS
DS
DS
G(ext)
DS
DS
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 6.3 A; V
= 25 °C; see
= 25 °C; see
= 2.3 A; V
= 6.3 A; dI
Figure 8
Figure 8
Figure 8
Figure 9
Figure 9
Figure 14
= 100 V; V
= 80 V; V
= 25 V; V
= 50 V; R
= 15 V; I
= 25 V; T
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 6 Ω; T
Rev. 02 — 25 November 2009
GS
DS
DS
DS
DS
S
D
D
D
and
and
j
GS
GS
DS
L
/dt = -100 A/µs; V
GS
DS
= 25 °C
= V
= V
= V
= 5.2 A; T
= 5.2 A; T
= 6.3 A; see
GS
j
= 50 V; V
Figure 11
Figure 12
= 50 Ω; V
= 0 V; T
= 25 °C; I
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
10
10
= 0 V; T
= 0 V; T
GS
GS
GS
; T
; T
; T
N-channel TrenchMOS SiliconMAX standard level FET
j
j
j
j
= 150 °C;
= -55 °C;
= 25 °C;
= 25 °C;
j
j
j
j
GS
GS
j
j
D
= 25 °C
= 25 °C
= 150 °C;
= 25 °C;
j
= 25 °C
= 25 °C
= 150 °C
= 1 A
Figure 13
= 10 V;
= 10 V;
GS
= 0 V;
PSMN038-100K
Min
100
1.2
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
130
-
-
-
-
-
-
-
76
33
43
6.5
16
1740
220
135
15
13
50
25
20
0.7
85
0.3
© NXP B.V. 2009. All rights reserved.
Max
-
-
6
4
0.5
1
100
100
88
38
-
-
21.5
-
-
-
30
25
80
40
-
1.1
-
-
Unit
V
V
V
V
mA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
S
V
ns
µC
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