PSMN1R2-25YL NXP Semiconductors, PSMN1R2-25YL Datasheet - Page 6

• Manufacturer Part Number: PSMN1R2-25YL
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
[1]
PSMN1R2-25YL_1
Product data sheet
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
SD
r
Tested to JEDEC standards where applicable.
(A)
100
I
D
80
60
40
20
0
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
0
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
1
T
j
= 150 °C
…continued
2
Conditions
V
R
I
see
I
V
S
S
DS
G(ext)
DS
25 °C
= 25 A; V
= 20 A; dI
3
Figure 15
= 12 V; R
= 20 V
003aad128
V
GS
= 5.6 Ω
(V)
GS
S
4
Rev. 01 — 25 June 2009
/dt = -100 A/µs; V
L
= 0 V; T
= 0.5 Ω; V
j
N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
= 25 °C;
GS
Fig 6.
R
(mΩ)
DS
= 4.5 V;
(on)
GS
12
10
8
6
4
2
0
= 0 V;
of gate-source voltage; typical values
Drain-source on-state resistance as a function
0
5
PSMN1R2-25YL
Min
-
-
-
-
-
-
-
10
Typ
69
125
94
56
0.78
52
66
15
© NXP B.V. 2009. All rights reserved.
003aad140
V
Max
-
-
-
-
1.2
-
-
GS
(V)
20
Unit
ns
ns
ns
ns
V
ns
nC
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