PSMN2R9-25YLC NXP Semiconductors, PSMN2R9-25YLC Datasheet

Logic level enhancement mode N-channel MOSFET in LFPAK package

PSMN2R9-25YLC

Manufacturer Part Number
PSMN2R9-25YLC
Description
Logic level enhancement mode N-channel MOSFET in LFPAK package
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN2R9-25YLC
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
Table 1.
Symbol
V
I
P
T
D
j
DS
tot
PSMN2R9-25YLC
N-channel 25 V 3.15 mΩ logic level MOSFET in LFPAK using
NextPower technology
Rev. 1 — 2 May 2011
High reliability Power SO8 package,
qualified to 175°C
Low parasitic inductance and
resistance
DC-to-DC converters
Lithium-ion battery protection
Load switching
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
junction
temperature
Conditions
25 °C ≤ T
T
see
T
mb
mb
Figure 1
= 25 °C; V
= 25 °C; see
j
≤ 175 °C
GS
Figure 2
= 10 V;
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
Ultra low QG, QGD and QOSS for high
system efficiencies at low and high
loads
Power OR-ing
Server power supplies
Sync rectifier
[1]
Min
-
-
-
-55
Product data sheet
Typ
-
-
-
-
Max
25
100
92
175
Unit
V
A
W
°C

Related parts for PSMN2R9-25YLC

PSMN2R9-25YLC Summary of contents

Page 1

... PSMN2R9-25YLC N-channel 25 V 3.15 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 2 May 2011 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...

Page 2

... Figure 14; see total gate charge Simplified outline SOT669 (LFPAK; Power-SO8) Description plastic single-ended surface-mounted package; 4 leads Marking code 2C925L All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN2R9-25YLC Min Typ = 3. 2. 4.4 Figure ...

Page 3

... T pulsed ° ° j(init) ≤ unclamped sup see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN2R9-25YLC Min Max - kΩ -20 20 [1] Figure 1 - 100 Figure ...

Page 4

... All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN2R9-25YLC 100 150 Normalized total power dissipation as a function of mounting base temperature 003a a f 809 ( © NXP B.V. 2011. All rights reserved. ...

Page 5

... N-channel 25 V 3.15 mΩ logic level MOSFET in LFPAK using = DSon Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN2R9-25YLC 003aaf796 =10 μ 100 μ 100 (V) DS Min Typ Max - 1 ...

Page 6

... V; see Figure D DS see Figure MHz °C; see Figure 0.5 Ω 4 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN2R9-25YLC Min Typ Max 22 1.05 1.54 1. 100 - - ...

Page 7

... DS on (mΩ ( (V) DS Fig 7. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN2R9-25YLC Min Typ Max - 18 0.8 1 003a a f 799 4 ...

Page 8

... I (A) D Fig 9. 003a a f 803 V Max (V) GS Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN2R9-25YLC 100 150 ° ° Transfer characteristics ...

Page 9

... GS 3.5 4 100 I (A) D Fig 13. Normalized drain-source on-state resistance Q GD 003aaa508 Fig 15. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN2R9-25YLC =10V GS 1.5 1 0 factor as a function of junction temperature ...

Page 10

... 100 V (V) DS Fig 17. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN2R9-25YLC 150 ° 0.4 0.8 voltage; typical values 003a a f 444 ...

Page 11

... A 0 2.5 scale max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN2R9-25YLC detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5.8 0.40 0.8 EUROPEAN PROJECTION ...

Page 12

... NXP Semiconductors 9. Revision history Table 8. Revision history Document ID Release date PSMN2R9-25YLC v.1 20110502 PSMN2R9-25YLC Product data sheet N-channel 25 V 3.15 mΩ logic level MOSFET in LFPAK using Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN2R9-25YLC © NXP B.V. 2011. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN2R9-25YLC © NXP B.V. 2011. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 2 May 2011 Document identifier: PSMN2R9-25YLC ...

Related keywords