BLF7G24L-100 NXP Semiconductors, BLF7G24L-100 Datasheet - Page 7

• Manufacturer Part Number: BLF7G24L-100
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G24L-100_7G24LS-100
Product data sheet
Fig 9.
Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a
APCR
(dBc)
(dB)
G
(1) f = 2300 MHz
(2) f = 2400 MHz
(1) f = 2300 MHz
(2) f = 2400 MHz
19.5
18.5
17.5
16.5
−10
−20
−30
−40
−50
−60
p
5M
0
V
Single carrier W-CDMA power gain as a
function of load power; typical values
0
V
function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
20
20
7.4 Single carrier W-CDMA
Dq
Dq
= 900 mA.
= 900 mA.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel
bandwidth is 3.84 MHz.
40
40
(2)
(1)
(2)
(1)
60
60
80
80
All information provided in this document is subject to legal disclaimers.
001aan503
001aan505
P
P
L
L
(W)
(W)
BLF7G24L-100; BLF7G24LS-100
100
100
Rev. 4 — 22 July 2011
Fig 10. Single carrier W-CDMA drain efficiency as a
Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a
APCR
(dBc)
(%)
η
(1) f = 2300 MHz
(2) f = 2400 MHz
(1) f = 2300 MHz
(2) f = 2400 MHz
D
−20
−30
−40
−50
−60
−70
10M
60
50
40
30
20
10
0
0
V
function of load power; typical values
V
function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
20
20
Dq
Dq
= 900 mA.
= 900 mA.
40
40
(1)
(2)
(2)
(1)
Power LDMOS transistor
60
60
© NXP B.V. 2011. All rights reserved.
80
80
001aan504
001aan506
P
P
L
L
(W)
(W)
100
100
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